KEXIN 2SK3065

MOSFET
SMD Type
Silicon N-Channel MOSFET
2SK3065
SOT-89
Unit: mm
4.50
1.50
+0.1
-0.1
+0.1
-0.1
+0.1
2.50-0.1
Low on resistance.
High-speed switching.
3
2
+0.1
0.53-0.1
+0.1
0.48-0.1
+0.1
0.44-0.1
+0.1
2.60-0.1
undervoltage actuation (2.5V actuation).
+0.1
0.80-0.1
1
Optimum for a pocket resource etc. because of
+0.1
4.00-0.1
+0.1
1.80-0.1
Features
Driving circuit is easy.
Easy to use parallel.
+0.1
3.00-0.1
1 Gate
1. Source
Base
1.
+0.1
0.40-0.1
It is strong to an electrostatic discharge.
2 Drain
Collector
2.2. Drain
3 Source
Emiitter
3.3. Gate
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
ID
Drain current
20
V
2
A
Idp *
8
A
PD
0.5
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
Power dissipation
* PW
TC=25
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Drain to source breakdown voltage
VDSS
ID=1mA,VGS=0
Drain cut-off current
IDSS
VDS=60V,VGS=0
IGSS
VGS= 20V,VDS=0
VGS(th)
VDS=10V,ID=1mA
0.8
VDS=10V,ID=1A
1.5
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Yfs
RDS(on)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Typ
Max
60
Unit
V
10
10
1.5
A
A
V
S
VGS=4V,ID=1A
0.25
0.32
VGS=2.5V,ID=1A
0.35
0.45
160
pF
85
pF
Crss
25
pF
Turn-on delay time
ton
20
ns
Rise time
tr
50
ns
Turn-off delay time
toff
120
ns
Fall time
tf
70
ns
VDS=10V,VGS=0,f=1MHZ
ID=1A,VGS(on)=4V,RL=30
,VDD=30V,RG=10
Marking
Marking
KE
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