Transistors IC SMD Type Dual N-Channel 20-V (D-S) MOSFET KI1902DL SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 0.36 +0.15 2.3-0.15 +0.1 1.25-0.1 0.525 Features +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-source voltage VDS Gate-source voltage VGS Continuous drain current (TJ = 150 )* TA=25 -TA=85 ID Pulsed drain current IDM 5 secs Steady State Unit 20 V 12 V 0.66 0.48 0.70 0.50 A 1.0 A Continuous source current (diode conduction) * IS 0.25 0.23 A TA=25 TA=85 PD 0.30 0.16 0.27 0.14 W Power dissipation * -- Operating junction and storage temperature range -55 to +150 Tj,Tstg * Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient* Symbol t 5 sec RthJA Steady State Maximum Junction-to-Foot (Drain) Steady State RthJF Typical Maximum 360 415 400 460 300 350 Unit /W * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 Transistors IC SMD Type KI1902DL Electrical Characteristics Ta = 25 Parameter Symbol Gate threshold voltage VGS(th) Gate-body leakage IGSS Zero gate voltage drain current IDSS On-state drain current ID(on) Drain-source on-state resistance rDS(on) Testconditons VDS = 0 V, VGS = 12 V 0.320 0.385 VGS = 2.5V, ID =0.40A 0.560 0.630 IS = 0.23 A, VGS = 0 V Gate-source charge * Qgs 1.5 VDS =10V ,VGS = 4.5 V , ID= 0.66A 2 PA www.kexin.com.cn 1.2 1.2 10 20 16 30 10 20 10 20 20 40 VDD = 10V , RL = 20 , ID =0.5A , VGEN =4.5V , RG = 6 trr IF = 0.23 A, di/dt = 100 A/ s V nC 0.06 0.30 tf Marking 0.8 0.8 Qgd td(off) Marking S td(on) tr A A VGS = 4.5 V, ID = 0.66 A Qg 2%. nA 1.0 VDS = 5 V, VGS = 4.5 V VSD 300 ìs duty cycle 100 VDS =16 V, VGS = 0 V, TJ = 85 Total gate charge * * Pulse test: PW V 1 Diode forward voltage Source-Drain Reverse Recovery Time Unit 15 5 VDS = 10 V, ID = 0.66 A Turn-off time Max VDS = 16 V, VGS = 0 V gfs Turn-on time Typ 0.6 VDS = VGS, ID = 250 A Forward transconductance Gate-drain charge * Min ns