Transistors IC SMD Type Complementary 20-V (D-S) Low-Threshold MOSFET KI1563EDH SOT-363 Unit: mm 0.525 +0.1 1.3-0.1 0.65 +0.15 2.3-0.15 +0.1 1.25-0.1 Features 0.36 TrenchFET Power MOSFETs +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Absolute Maximum Ratings TA = 25 Parameter Symbol N-Channel 5 secs Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID 0.92 Maximum Power Dissipation* TA = 25 PD TA = 85 Operating Junction and Storage Temperature Range -20 V V 1.13 -1 0.81 -0.72 4 IS Unit Steady State 12 1.28 IDM Continuous Source Current (Diode Conduction)* 5 secs 20 TA = 85 Pulsed Drain Current P-Channel Steady State -0.88 A -0.63 A -3 A 0.61 0.48 -0.61 -0.48 A 0.74 0.57 0.3 0.57 W 0.38 0.3 0.16 0.3 W -55 to 150 TJ, Tstg *Surface Mounted on 1" X 1' FR4 Board. Thermal Resistance Ratings TA = 25 Parameter Maximum Junction-to-Ambient* Symbol t 5 sec RthJA Steady State Maximum Junction-to-Foot (Drain) Steady State RthJF Typical Maximum 130 170 170 220 80 100 Unit /W *Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 Transistors IC SMD Type KI1563EDH Electrical Characteristics TJ = 25 Parameter Testconditons Symbol VGS( th) Gate Threshold Voltage VDS = VGS, ID = 100 A 0.45 VDS = VGS, ID = -100 P-Ch -0.45 A VDS = 0 V VGS = 4.5V Gate Body Leakage IGSS VDS = 0 V VGS = 12V Zero Gate Voltage Drain Current ID(on) On State Drain Current* Drain Source On State Resistance* rDS(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn On Time Rise Time Turn Off Delay Time Fall Time * Pulse test; pulse width 2 IDSS www.kexin.com.cn td(on) tr td( off) tf Min N-Ch Typ Max V N-Ch 1 P-Ch 1 N-Ch 10 P-Ch 10 VDS = 16V, VGS = 0 V N-Ch 1 VDS = -16V, VGS = 0 V P-Ch -1 VDS = 16 V, VGS = 0 V, TJ = 85 N-Ch 5 VDS = -16V, VGS = 0 V, TJ = 85 P-Ch -5 VDS 5 V, VGS = 4.5 V N-Ch 2 VDS -5 V, VGS = -4.5 V P-Ch -2 VGS = 4.5 V, ID = 1.13A N-Ch 0.220 0.280 P-Ch 0.400 0.490 VGS = 2.5 V, ID = 0.99A N-Ch 0.281 0.360 0.610 0.750 VGS = -2.5 V, ID = -0.71A P-Ch VGS = 1.8 V, ID = 0.2A N-Ch 0.344 0.450 VGS = -1.8 V, ID = -0.20A P-Ch 0.850 VDS = 10 V, ID = 1.13A N-Ch 2.6 VDS = -10 V, ID = -0.88A P-Ch 1.5 IS = 0.48A, VGS = 0 V N-Ch 0.8 1.2 IS = -0.48A, VGS = 0 V P-Ch -0.8 -1.2 N-Channel N-Ch 0.65 1.0 mA A A 1.8 1.10 mS P-Ch 1.2 N-Ch 0.2 P-Channel P-Ch 0.3 VDS = -10 V, VGS = -4.5 V, ID = -0.88A N-Ch 0.23 P-Ch 0.3 N Channel N-Ch 45 70 VDD = 10 V, RL = 20 P-Ch 150 230 ID= 0.5 A, VGEN = 4.5V, Rg = 6 N-Ch 85 130 P-Ch 480 720 P-Channel N-Ch 350 530 VDD = -10 V, RL = 20 P-Ch 840 1200 ID= -0.5 A, VGEN = -4.5 V, Rg = 6 N-Ch 210 320 P-Ch 850 1200 300 s, duty cycle 2%. A A VGS = -4.5 V, ID = -0.88A VDS = 10 V, VGS = 4.5V, ID = 1.13A Unit V pC ns