KEXIN KI4403BDY

IC
IC
SMD Type
P-Channel 1.8-V (G-S) MOSFET
KI4403BDY
Features
TrenchFET Power MOSFET
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
10 sec
Steady State
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
8
V
Continuous Drain Current (TJ=150 ) * TA=25
------------------------------------------------TA=70
ID
Pulsed Drain Current
IDM
-9.9
-7.9
-7.3
-5.8
-30
A
A
Continuous Source Current (diode conduction) *
IS
-2.3
-1.3
A
Power Dissipation *
TA=25
-------------------------------------------------TA=70
PD
2.5
1.6
1.35
0.87
W
Jumction Temperature
Tj
150
Storage Temperature
Tstg
-55 to +150
* Surface Mounted on 1" X 1" FR4 Board.
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1
IC
IC
SMD Type
KI4403BDY
Electrical Characteristics Ta = 25
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-State Resistance *
rDS(on)
VDS = VGS, ID = -350
VDS = 0 V, VGS =
Min
Typ
-0.45
A
Max
-1.0
8V
100
VDS = -16 V, VGS = 0 V
-1
VDS = -16 V, VGS = 0 V, TJ = 70
-10
VDS
20
-5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -9.9 A
0.014 0.017
VGS = -2.5 V, ID = -8.5A
0.018 0.023
VGS = -1.8 V, ID = -3.1 A
0.024 0.032
gfs
VDS = -15 V, ID = -9.9 A
36
Diode Forward Voltage *
VSD
IS = -2.3A, VGS = 0 V
-0.8
-1.1
Total Gate Charge
Qg
33
50
VDS = -10V ,VGS = -5 V , ID= -9.9 A
Qgd
7.6
Turn-On Delay Time
td(on)
25
40
45
70
150
225
70
110
40
60
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
* Pulse test: PW
300 ìs duty cycle
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2%.
IF = -2.3 A, di/dt = 100 A/
s
A
V
nC
4.2
Qgs
Gate-Drain Charge
VDD = -10V , RL = 15 ,
ID = -1A , VGEN =- 4.5V , RG = 6
V
nA
S
Gate-Source Charge
tr
Unit
A
Forward Transconductance *
Rise Time
2
Testconditons
ns