IC IC SMD Type P-Channel 1.8-V (G-S) MOSFET KI4403BDY Features TrenchFET Power MOSFET Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 sec Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 8 V Continuous Drain Current (TJ=150 ) * TA=25 ------------------------------------------------TA=70 ID Pulsed Drain Current IDM -9.9 -7.9 -7.3 -5.8 -30 A A Continuous Source Current (diode conduction) * IS -2.3 -1.3 A Power Dissipation * TA=25 -------------------------------------------------TA=70 PD 2.5 1.6 1.35 0.87 W Jumction Temperature Tj 150 Storage Temperature Tstg -55 to +150 * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI4403BDY Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-State Resistance * rDS(on) VDS = VGS, ID = -350 VDS = 0 V, VGS = Min Typ -0.45 A Max -1.0 8V 100 VDS = -16 V, VGS = 0 V -1 VDS = -16 V, VGS = 0 V, TJ = 70 -10 VDS 20 -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -9.9 A 0.014 0.017 VGS = -2.5 V, ID = -8.5A 0.018 0.023 VGS = -1.8 V, ID = -3.1 A 0.024 0.032 gfs VDS = -15 V, ID = -9.9 A 36 Diode Forward Voltage * VSD IS = -2.3A, VGS = 0 V -0.8 -1.1 Total Gate Charge Qg 33 50 VDS = -10V ,VGS = -5 V , ID= -9.9 A Qgd 7.6 Turn-On Delay Time td(on) 25 40 45 70 150 225 70 110 40 60 Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test: PW 300 ìs duty cycle www.kexin.com.cn 2%. IF = -2.3 A, di/dt = 100 A/ s A V nC 4.2 Qgs Gate-Drain Charge VDD = -10V , RL = 15 , ID = -1A , VGEN =- 4.5V , RG = 6 V nA S Gate-Source Charge tr Unit A Forward Transconductance * Rise Time 2 Testconditons ns