KEXIN KI5404BDC

IC
IC
SMD Type
N-Channel 2.5-V (G-S) MOSFET
KI5404BDC
Features
TrenchFET Power MOSFET
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150
)*
TA = 25
ID
5 secs
Steady State
20
V
12
7.5
5.4
TA = 70
Pulsed Drain Current
Continuous Source Current *
Maximum Power Dissipation *
IS
TA = 25
PD
TA = 70
Operating Junction and Storage Temperature Range
2.1
1.1
2.5
1.3
1.3
0.7
260
Parameter
Symbol
t
5 sec
RthJA
Steady-State
Maximum Junction-to-Foot (Drain)
W
-55 to 150
TJ, Tstg
Soldering Recommendations (Peak Temperature)
Maximum Junction-to-Ambienta
A
20
IDM
Unit
Steady-State
RthJF
Typ
Max
45
50
80
95
18
22
Unit
/W
* Surface Mounted on 1" X 1' FR4 Board.
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1
IC
IC
SMD Type
KI5404BDC
Electrical Characteristics Ta = 25
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
On-State Drain Current*
ID(on)
Drain-Source On-State Resistance*
rDS(on)
VDS = VGS, ID = 250 ìA
VDS = 0 V, VGS =
Min
Typ
0.6
12 V
Max
Unit
1.5
V
100
nA
VDS = 20 V, VGS = 0 V
1
A
VDS = 20 V, VGS = 0 V, TJ = 85
5
A
VDS
20
5 V, VGS = 4.5 V
A
VGS = 4.5 V, ID = 5.4 A
0.022
0.028
VGS = 2.5 V, ID = 2.6 A
0.031
0.039
Forward Transconductance*
gfs
VDS = 10 V, ID = 5.4 A
26
S
Schottky Diode Forward Voltage*
VSD
IS = 1.1 A, VGS = 0 V
0.7
V
Total Gate Charge
Qg
7
nC
Qgs
1.7
nC
Gate-Drain Charge
Qgd
2
nC
Gate Resistance
Rg
1.7
Turn-On Delay Time
td(on)
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
* Pulse test; pulse width
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VDS = 10 V, VGS = 4.5 V, ID = 5.4 A
11
Gate-Source Charge
Rise Time
2
IDSS
Testconditons
300 s, duty cycle
2%.
12
20
ns
VDD = 10 V, RL = 10
12
20
ns
ID = 1 A, VGEN = 4.5V, RG = 6
25
40
ns
10
20
ns
20
40
ns
IF = 1.1 A, di/dt = 100 A/
s