IC IC SMD Type P-Channel 2.5-V (G-S) MOSFET KI5441DC Features TrenchFET Power MOSFET 2.5-V Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS 12 Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 85 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * IS TA = 25 PD TA = 85 Operating Junction and Storage Temperature Range -5.3 -3.9 -2.8 -20 -2.1 -1.1 2.5 1.3 1.3 0.7 Symbol 5 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) W 260 Parameter t A -55 to 150 TJ, Tstg Soldering Recommendations (Peak Temperature) Maximum Junction-to-Ambienta V -3.8 IDM Unit Steady-State RthJF Typ Max 40 50 80 95 15 20 Unit /W * Surface Mounted on 1" X 1' FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI5441DC Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current* ID(on) Drain-Source On-State Resistance* rDS(on) Min VDS = 0 V, VGS = Typ -0.6 12 V Max Unit -1.0 V 100 nA VDS = -20V, VGS = 0 V -1 A VDS = -20V, VGS = 0 V, TJ = 85 -5 A VDS -20 - 5 V, VGS = -4.5 V A VGS = -4.5 V, ID = -3.9A 0.046 0.055 VGS = -3.6 V, ID = -3.7A 0.05 0.06 VGS = -2.5 V, ID = -3.1A 0.07 0.083 Forward Transconductance* gfs VDS = -10 V, ID = -3.9A 12 Schottky Diode Forward Voltage* VSD IS = -1.1 A, VGS = 0 V -0.8 -1.2 V Total Gate Charge Qg 11 22 nC Qgs 3.0 nC Gate-Drain Charge Qgd 2.5 nC Turn-On Delay Time td(on) 20 tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width www.kexin.com.cn 300 s, duty cycle 2%. VDS = -10V, VGS = -4.5 V, ID = -3.9 A S Gate-Source Charge Rise Time 2 Testconditons VDS = VGS, ID = -250 A 30 ns VDD = -10 V, RL = 10 35 55 ns ID = -1 A, VGEN = -4.5V, RG = 6 65 100 ns 45 70 ns 30 60 ns IF = -1.1 A, di/dt = 100 A/ s