KEXIN KI5441DC

IC
IC
SMD Type
P-Channel 2.5-V (G-S) MOSFET
KI5441DC
Features
TrenchFET Power MOSFET
2.5-V Rated
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
12
Continuous Drain Current (TJ = 150
)*
TA = 25
ID
TA = 85
Pulsed Drain Current
Continuous Source Current *
Maximum Power Dissipation *
IS
TA = 25
PD
TA = 85
Operating Junction and Storage Temperature Range
-5.3
-3.9
-2.8
-20
-2.1
-1.1
2.5
1.3
1.3
0.7
Symbol
5 sec
RthJA
Steady-State
Maximum Junction-to-Foot (Drain)
W
260
Parameter
t
A
-55 to 150
TJ, Tstg
Soldering Recommendations (Peak Temperature)
Maximum Junction-to-Ambienta
V
-3.8
IDM
Unit
Steady-State
RthJF
Typ
Max
40
50
80
95
15
20
Unit
/W
* Surface Mounted on 1" X 1' FR4 Board.
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1
IC
IC
SMD Type
KI5441DC
Electrical Characteristics Ta = 25
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current*
ID(on)
Drain-Source On-State Resistance*
rDS(on)
Min
VDS = 0 V, VGS =
Typ
-0.6
12 V
Max
Unit
-1.0
V
100
nA
VDS = -20V, VGS = 0 V
-1
A
VDS = -20V, VGS = 0 V, TJ = 85
-5
A
VDS
-20
- 5 V, VGS = -4.5 V
A
VGS = -4.5 V, ID = -3.9A
0.046
0.055
VGS = -3.6 V, ID = -3.7A
0.05
0.06
VGS = -2.5 V, ID = -3.1A
0.07
0.083
Forward Transconductance*
gfs
VDS = -10 V, ID = -3.9A
12
Schottky Diode Forward Voltage*
VSD
IS = -1.1 A, VGS = 0 V
-0.8
-1.2
V
Total Gate Charge
Qg
11
22
nC
Qgs
3.0
nC
Gate-Drain Charge
Qgd
2.5
nC
Turn-On Delay Time
td(on)
20
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
* Pulse test; pulse width
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300 s, duty cycle
2%.
VDS = -10V, VGS = -4.5 V, ID = -3.9 A
S
Gate-Source Charge
Rise Time
2
Testconditons
VDS = VGS, ID = -250 A
30
ns
VDD = -10 V, RL = 10
35
55
ns
ID = -1 A, VGEN = -4.5V, RG = 6
65
100
ns
45
70
ns
30
60
ns
IF = -1.1 A, di/dt = 100 A/
s