IC IC SMD Type N-Channel 2.5-V (G-S) MOSFET KI5406DC Features TrenchFET Power MOSFETS: 2.5-V Rated Low Thermal Resistance Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 12 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 )* TA = 25 ID 9.5 V 6.9 TA = 85 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * IS TA = 25 PD TA = 85 Operating Junction and Storage Temperature Range 2.1 1.1 2.5 1.3 1.3 0.7 260 Parameter Maximum Junction-to-Ambienta Symbol 5 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) W -55 to 150 TJ, Tstg Soldering Recommendations (Peak Temperature) t A 20 IDM Unit Steady-State RthJF Typ Max 40 50 80 95 15 20 Unit /W * Surface Mounted on 1" X 1' FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI5406DC Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current* ID(on) Drain-Source On-State Resistance* rDS(on) VDS = 0 V, VGS = Qg Gate-Source Charge Qgs Unit V 100 nA 1 A 5 A VDS 20 5 V, VGS = 4.5 V A VGS = 4.5 V, ID = 6.9A 0.017 0.028 VGS = 2.5 V, ID = 2A 0.021 0.039 30 IS = 1.1 A, VGS = 0 V VSD Max VDS = 9.6V, VGS = 0 V, TJ = 85 VDS = 10 V, ID = 6.9A Schottky Diode Forward Voltage* Typ 0.6 VDS = 9.6 V, VGS = 0 V gfs Total Gate Charge Min 8V Forward Transconductance* S 0.7 13.7 VDS = 6V, VGS = 4.5 V, ID = 6.9 A V 20 2.3 nC nC Gate-Drain Charge Qgd 4.1 Turn-On Delay Time td(on) 17 25 ns VDD = 6 V, RL = 6 46 70 ns ID = 1 A, VGEN = 4.5V, RG = 6 54 80 ns 29 45 ns 35 70 ns Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width 2 Testconditons VDS = VGS, ID = 1.2mA www.kexin.com.cn 300 s, duty cycle 2%. IF = 1.1 A, di/dt = 100 A/ s nC