KEXIN KI5406DC

IC
IC
SMD Type
N-Channel 2.5-V (G-S) MOSFET
KI5406DC
Features
TrenchFET Power MOSFETS: 2.5-V Rated
Low Thermal Resistance
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
12
Gate-Source Voltage
VGS
8
Continuous Drain Current (TJ = 150
)*
TA = 25
ID
9.5
V
6.9
TA = 85
Pulsed Drain Current
Continuous Source Current *
Maximum Power Dissipation *
IS
TA = 25
PD
TA = 85
Operating Junction and Storage Temperature Range
2.1
1.1
2.5
1.3
1.3
0.7
260
Parameter
Maximum Junction-to-Ambienta
Symbol
5 sec
RthJA
Steady-State
Maximum Junction-to-Foot (Drain)
W
-55 to 150
TJ, Tstg
Soldering Recommendations (Peak Temperature)
t
A
20
IDM
Unit
Steady-State
RthJF
Typ
Max
40
50
80
95
15
20
Unit
/W
* Surface Mounted on 1" X 1' FR4 Board.
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1
IC
IC
SMD Type
KI5406DC
Electrical Characteristics Ta = 25
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current*
ID(on)
Drain-Source On-State Resistance*
rDS(on)
VDS = 0 V, VGS =
Qg
Gate-Source Charge
Qgs
Unit
V
100
nA
1
A
5
A
VDS
20
5 V, VGS = 4.5 V
A
VGS = 4.5 V, ID = 6.9A
0.017
0.028
VGS = 2.5 V, ID = 2A
0.021
0.039
30
IS = 1.1 A, VGS = 0 V
VSD
Max
VDS = 9.6V, VGS = 0 V, TJ = 85
VDS = 10 V, ID = 6.9A
Schottky Diode Forward Voltage*
Typ
0.6
VDS = 9.6 V, VGS = 0 V
gfs
Total Gate Charge
Min
8V
Forward Transconductance*
S
0.7
13.7
VDS = 6V, VGS = 4.5 V, ID = 6.9 A
V
20
2.3
nC
nC
Gate-Drain Charge
Qgd
4.1
Turn-On Delay Time
td(on)
17
25
ns
VDD = 6 V, RL = 6
46
70
ns
ID = 1 A, VGEN = 4.5V, RG = 6
54
80
ns
29
45
ns
35
70
ns
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
* Pulse test; pulse width
2
Testconditons
VDS = VGS, ID = 1.2mA
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300 s, duty cycle
2%.
IF = 1.1 A, di/dt = 100 A/
s
nC