KEXIN KI4923DY

IC
IC
SMD Type
Dual P-Channel 30-V (D-S) MOSFET
KI4923DY
Features
TrenchFET Power MOSFETS
Advanced High Cell Density Process
1: Source 1
3: Source 2
2: Gate 1
4: Gate 2
7,8: Drain 1
5,6: Drain 2
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150
)*
TA = 25
ID
Maximum Power Dissipation *
IS
TA = 25
PD
TA = 70
Operating Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient*
10 sec
RthJA
Steady-State
Maximum Junction-to-Foot (Drain)
Steady-State
-1.7
RthJF
A
-0.9
2
1.1
1.3
0.7
W
-55 to 150
TJ, Tstg
Symbol
t
-5
-30
IDM
Continuous Source Current *
V
-6.2
-6.6
TA = 70
Pulsed Drain Current
-8.3
Unit
Typ
Max
45
62.5
85
110
26
35
Unit
/W
* Surface Mounted on 1" X 1' FR4 Board.
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1
IC
IC
SMD Type
KI4923DY
Electrical Characteristics Ta = 25
Parameter
Symbol
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current*
ID(on)
Drain-Source On-State Resistance*
rDS(on)
VDS = 0 V, VGS =
Min
Typ
-1
20 V
Max
Unit
-3
V
100
nA
VDS = -24V, VGS = 0 V
-1
A
VDS = -24V, VGS = 0 V, TJ = 85
-25
A
VDS =- 5 V, VGS = -10 V
-30
A
VGS = -10 V, ID = -8.3A
0.017
0.021
VGS = -4.5 V, ID = -6.8A
0.025
.031
26
Forward Transconductance*
gfs
VDS = -10 V, ID = -8.3A
Schottky Diode Forward Voltage*
VSD
IS = -1.7 A, VGS = 0 V
Total Gate Charge
Qg
S
-0.8
-1.2
V
45.5
70
nC
Gate-Source Charge
Qgs
6.5
nC
Gate-Drain Charge
Qgd
12.6
nC
Turn-On Delay Time
td(on)
15
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
* Pulse test; pulse width
2
Testconditons
VDS = VGS, ID = -250 A
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300 s, duty cycle
2%.
VDS = -15V, VGS = -10 V, ID = -8.3 A
25
ns
VDD = -15 V, RL = 15
10
15
ns
ID = -1 A, VGEN = -10V, RG = 6
135
210
ns
80
120
ns
70
110
ns
IF = -1.7 A, di/dt = 100 A/
s