IC IC SMD Type Dual P-Channel 30-V (D-S) MOSFET KI4923DY Features TrenchFET Power MOSFETS Advanced High Cell Density Process 1: Source 1 3: Source 2 2: Gate 1 4: Gate 2 7,8: Drain 1 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS -30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 )* TA = 25 ID Maximum Power Dissipation * IS TA = 25 PD TA = 70 Operating Junction and Storage Temperature Range Parameter Maximum Junction-to-Ambient* 10 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) Steady-State -1.7 RthJF A -0.9 2 1.1 1.3 0.7 W -55 to 150 TJ, Tstg Symbol t -5 -30 IDM Continuous Source Current * V -6.2 -6.6 TA = 70 Pulsed Drain Current -8.3 Unit Typ Max 45 62.5 85 110 26 35 Unit /W * Surface Mounted on 1" X 1' FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI4923DY Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current* ID(on) Drain-Source On-State Resistance* rDS(on) VDS = 0 V, VGS = Min Typ -1 20 V Max Unit -3 V 100 nA VDS = -24V, VGS = 0 V -1 A VDS = -24V, VGS = 0 V, TJ = 85 -25 A VDS =- 5 V, VGS = -10 V -30 A VGS = -10 V, ID = -8.3A 0.017 0.021 VGS = -4.5 V, ID = -6.8A 0.025 .031 26 Forward Transconductance* gfs VDS = -10 V, ID = -8.3A Schottky Diode Forward Voltage* VSD IS = -1.7 A, VGS = 0 V Total Gate Charge Qg S -0.8 -1.2 V 45.5 70 nC Gate-Source Charge Qgs 6.5 nC Gate-Drain Charge Qgd 12.6 nC Turn-On Delay Time td(on) 15 Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width 2 Testconditons VDS = VGS, ID = -250 A www.kexin.com.cn 300 s, duty cycle 2%. VDS = -15V, VGS = -10 V, ID = -8.3 A 25 ns VDD = -15 V, RL = 15 10 15 ns ID = -1 A, VGEN = -10V, RG = 6 135 210 ns 80 120 ns 70 110 ns IF = -1.7 A, di/dt = 100 A/ s