Transistors IC SMD Type N- and P-Channel MOSFET KI4505DY Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 N-Channel Symbol Parameter 10 sec Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 70 Pulsed Drain Current Maximum Power Dissipation* TA = 25 IS PD TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board;t Steady State 10 sec 30 Unit Steady State -8 20 V 8 V 7.8 6 -5 -3.8 A 6 5.2 -3.6 -3 A 1.8 1 -1.8 1 A 2 1.2 2 1.2 W 1.3 0.75 1.3 0.75 W 30 IDM Continuous Source Current (Diode Conduction)* P-Channel -30 A -55 to 150 TJ, Tstg 10 sec. Thermal Resistance Ratings TA = 25 Parameter Maximum Junction-to-Ambient* Symbol t 10 sec RthJA Steady State Maximum Junction-to-Foot Steady State RthJc N-Channel P-Channel Typ Max Typ Max 50 62.5 50 62.5 85 105 85 105 30 40 30 40 Unit /W *Surface Mounted on FR4 Board. www.kexin.com.cn 1 Transistors IC SMD Type KI4505DY Electrical Characteristics TJ = 25 Parameter VGS( th) Gate Threshold Voltage IGSS Gate Body Leakage Zero Gate Voltage Drain Current Drain Source On State Resistance* rDS(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd td(on) Turn On Time Rise Time tr Turn Off Delay Time td( off) Fall Time tf Source-Drain Reverse Recovery Time 2 IDSS ID(on) On State Drain Currenta * Pulse test; pulse width www.kexin.com.cn Testconditons Symbol trr Min Typ Max VDS = VGS, ID = 250 A N-Ch 0.8 1.8 VDS = VGS, ID = -250 P-Ch -0.45 1.0 A VDS = 0 V VGS = 20 V N-Ch 100 VDS = 0 V VGS = 8 V P-Ch 100 VDS = 24V, VGS = 0 V N-Ch 1 VDS = -6.4V, VGS = 0 V P-Ch -1 VDS = 24 V, VGS = 0 V, TJ = 55 N-Ch 5 VDS = -6.4V, VGS = 0 V, TJ = 55 P-Ch -5 VDS =5 V, VGS = 10 V N-Ch 20 VDS =-5 V, VGS = -4.5 V P-Ch -20 VGS = 10 V, ID = 7.8A N-Ch 0.015 0.018 P-Ch 0.030 0.042 VGS = 4.5 V, ID = 6.4A N-Ch 0.022 0.027 VGS = -2.5 V, ID = -4.0A P-Ch 0.048 0.060 VDS = 15 V, ID = 7.8A N-Ch 18 VDS = -15 V, ID = -5.0A P-Ch 12 IS = 1.8A, VGS = 0 V N-Ch 0.73 1.1 IS = -1.8A, VGS = 0 V P-Ch -0.75 - 1.1 N-Channel N-Ch 11.5 20 20 P-Ch 13.5 3 P-Channel P-Ch 2.2 VDS = -4 V, VGS = -5 V, ID = -5.0A N-Ch 4 P-Ch 3 N Channel N-Ch 15 VDD = 15 V, RL = 15 P-Ch 21 40 ID= 1A, VGEN = 10V, Rg = 6 N-Ch 8 15 P-Ch 45 70 P-Channel N-Ch 35 55 VDD = -4 V, RL = 4 P-Ch 60 100 ID= -1 A, VGEN = -4.5 V, Rg = 6 N-Ch 10 20 85 300 s, duty cycle 2%. s nA A S N-Ch IF = 1.8 A, di/dt = 100 A/ V A VGS = -4.5 V, ID = -5.0A VDS = 15 V, VGS = 5V, ID = 7.8A Unit V nC 25 P-Ch 55 N-Ch 30 60 P-Ch 50 100 ns