KEXIN KI5504DC

IC
IC
SMD Type
Complementary 30-V (D-S) MOSFET
KI5504DC
PIN Configuration
Absolute Maximum Ratings TA = 25
Parameter
N-Channel
Symbol
5 secs
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 )* TA = 25
ID
TA = 85
Pulsed Drain Current
P-Channel
Steady State
30
Maximum Power Dissipation*
IS
TA = 25
PD
TA = 85
Operating Junction and Storage Temperature Range
Unit
Steady State
-30
V
20
V
3.9
2.9
2.8
2.1
A
2.8
2.1
2.0
1.5
A
10
IDM
Continuous Source Current (Diode Conduction)*
5 secs
A
1.8
0.9
-1.8
-0.9
A
2.1
1.1
2.1
1.1
W
1.1
0.6
1.1
0.6
W
-55 to 150
TJ, Tstg
*Surface Mounted on 1" X 1" FR4 Board.
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient*
Symbol
t
5 sec
RthJA
Steady State
Maximum Junction-to-Case (Drain)
Steady State
RthJF
Typ
Max
50
60
90
110
30
40
Unit
/W
*Surface Mounted on 1" X 1" FR4 Board.
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1
IC
IC
SMD Type
KI5504DC
Electrical Characteristics TJ = 25
Parameter
VGS( th)
Gate Threshold Voltage
IGSS
Gate Body Leakage
Zero Gate Voltage Drain Current
On State Drain Currenta
rDS(on)
Forward Transconductance*
gfs
Diode Forward Voltage*
VSD
Total Gate Charge
Qg
Gate Source Charge
Qgs
Gate Drain Charge
Qgd
td(on)
Turn On Time
tr
Rise Time
Turn Off Delay Time
td( off)
Fall Time
tf
Source-Drain Reverse Recovery Time
2
IDSS
ID(on)
Drain Source On State Resistance*
* Pulse test; pulse width
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Testconditons
Symbol
trr
Min
VDS = VGS, ID = 250 A
N-Ch
0.1
VDS = VGS, ID = -250
P-Ch
-1.0
A
Typ
Max
V
VDS = 0 V VGS = 20 V
N-Ch
100
VDS = 0 V VGS = 20 V
P-Ch
100
VDS = 24V, VGS = 0 V
N-Ch
1
VDS = -24V, VGS = 0 V
P-Ch
-1
VDS = 24 V, VGS = 0 V, TJ = 85
N-Ch
5
VDS = -24V, VGS = 0 V, TJ = 85
P-Ch
-5
VDS
5 V, VGS = 10 V
N-Ch
10
VDS
-5 V, VGS = -10 V
P-Ch
-10
VGS = 10 V, ID = 11.8A
N-Ch
0.072 0.085
P-Ch
0.137 0.165
VGS = 4.5 V, ID = 2.2A
N-Ch
0.120 0.143
VGS = -4.5 V, ID = -1.6A
P-Ch
0.240 0.290
VDS = 15 V, ID = 2.9A
N-Ch
6
VDS = -15 V, ID = -2.1A
P-Ch
3
IS = 0.9A, VGS = 0 V
N-Ch
0.8
1.2
IS = -0.9A, VGS = 0 V
P-Ch
-0.8
-1.2
N-Channel
N-Ch
5
7.5
6.6
P-Ch
5.5
0.8
P-Channel
P-Ch
1.2
VDS = -15 V, VGS = -10 V, ID = -2.1A
N-Ch
1.0
P-Ch
0.9
N Channel
N-Ch
7
11
VDD = 15 V, RL = 15
P-Ch
8
12
ID= 1A, VGEN = 10V, Rg = 6
N-Ch
12
18
P-Ch
11
18
P-Channel
N-Ch
12
18
VDD = -15 V, RL = 15
P-Ch
14
21
ID= -1 A, VGEN = -10 V, Rg = 6
N-Ch
7
11
P-Ch
8
12
IF =0.9 A, di/dt = 100 A/
N-Ch
40
80
P-Ch
40
80
IF = -0.9 A, di/dt = 100 A/
300 s, duty cycle 2%.
s
A
S
N-Ch
s
nA
A
VGS = -10 V, ID = -2.1A
VDS = 15V, VGS = 10V, ID = 2.9A
Unit
V
nC
ns