IC IC SMD Type Complementary 30-V (D-S) MOSFET KI5504DC PIN Configuration Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 5 secs Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 85 Pulsed Drain Current P-Channel Steady State 30 Maximum Power Dissipation* IS TA = 25 PD TA = 85 Operating Junction and Storage Temperature Range Unit Steady State -30 V 20 V 3.9 2.9 2.8 2.1 A 2.8 2.1 2.0 1.5 A 10 IDM Continuous Source Current (Diode Conduction)* 5 secs A 1.8 0.9 -1.8 -0.9 A 2.1 1.1 2.1 1.1 W 1.1 0.6 1.1 0.6 W -55 to 150 TJ, Tstg *Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient* Symbol t 5 sec RthJA Steady State Maximum Junction-to-Case (Drain) Steady State RthJF Typ Max 50 60 90 110 30 40 Unit /W *Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI5504DC Electrical Characteristics TJ = 25 Parameter VGS( th) Gate Threshold Voltage IGSS Gate Body Leakage Zero Gate Voltage Drain Current On State Drain Currenta rDS(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd td(on) Turn On Time tr Rise Time Turn Off Delay Time td( off) Fall Time tf Source-Drain Reverse Recovery Time 2 IDSS ID(on) Drain Source On State Resistance* * Pulse test; pulse width www.kexin.com.cn Testconditons Symbol trr Min VDS = VGS, ID = 250 A N-Ch 0.1 VDS = VGS, ID = -250 P-Ch -1.0 A Typ Max V VDS = 0 V VGS = 20 V N-Ch 100 VDS = 0 V VGS = 20 V P-Ch 100 VDS = 24V, VGS = 0 V N-Ch 1 VDS = -24V, VGS = 0 V P-Ch -1 VDS = 24 V, VGS = 0 V, TJ = 85 N-Ch 5 VDS = -24V, VGS = 0 V, TJ = 85 P-Ch -5 VDS 5 V, VGS = 10 V N-Ch 10 VDS -5 V, VGS = -10 V P-Ch -10 VGS = 10 V, ID = 11.8A N-Ch 0.072 0.085 P-Ch 0.137 0.165 VGS = 4.5 V, ID = 2.2A N-Ch 0.120 0.143 VGS = -4.5 V, ID = -1.6A P-Ch 0.240 0.290 VDS = 15 V, ID = 2.9A N-Ch 6 VDS = -15 V, ID = -2.1A P-Ch 3 IS = 0.9A, VGS = 0 V N-Ch 0.8 1.2 IS = -0.9A, VGS = 0 V P-Ch -0.8 -1.2 N-Channel N-Ch 5 7.5 6.6 P-Ch 5.5 0.8 P-Channel P-Ch 1.2 VDS = -15 V, VGS = -10 V, ID = -2.1A N-Ch 1.0 P-Ch 0.9 N Channel N-Ch 7 11 VDD = 15 V, RL = 15 P-Ch 8 12 ID= 1A, VGEN = 10V, Rg = 6 N-Ch 12 18 P-Ch 11 18 P-Channel N-Ch 12 18 VDD = -15 V, RL = 15 P-Ch 14 21 ID= -1 A, VGEN = -10 V, Rg = 6 N-Ch 7 11 P-Ch 8 12 IF =0.9 A, di/dt = 100 A/ N-Ch 40 80 P-Ch 40 80 IF = -0.9 A, di/dt = 100 A/ 300 s, duty cycle 2%. s A S N-Ch s nA A VGS = -10 V, ID = -2.1A VDS = 15V, VGS = 10V, ID = 2.9A Unit V nC ns