Transistors IC SMD Type Complementary 20-V (D-S) MOSFET KI1553DL SOT-363 Unit: mm +0.1 1.3-0.1 0.65 0.36 +0.15 2.3-0.15 +0.1 1.25-0.1 0.525 PIN Configuration +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 5 secs Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 Steady State Maximum Power Dissipation* TA = 25 V 12 0.7 ID V 0.66 0.5 0.44 0.48 0.31 0.41 A 0.3 A 1.0 IS PD TA = 85 Operating Junction and Storage Temperature Range Unit Steady State -20 IDM Continuous Source Current (Diode Conduction)a 5 secs 20 TA = 85 Pulsed Drain Current P-Channel A 0.25 0.23 -0.25 -0.23 A 0.3 0.27 0.3 0.27 W 0.16 0.14 0.16 0.14 W -55 to 150 TJ, Tstg *Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings TA = 25 Parameter Maximum Junction-to-Ambient* Symbol t 5 sec RthJA Steady State Maximum Junction-to-Foot (Drain) Steady State RthJF Typical Maximum 360 415 400 460 300 350 Unit /W *Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 Transistors IC SMD Type KI1553DL Electrical Characteristics TJ = 25 Parameter Symbol Gate Threshold Voltage VGS( th) Gate Body Leakage IGSS Testconditons VDS = VGS, ID = 250 A N-Ch 0.6 VDS = VGS, ID = -250 P-Ch -0.6 A VDS = 0 V VGS = 12V On State Drain Currenta IDSS ID(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn On Time td(on) Rise Time tr Turn Off Delay Time td( off) Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width 2 rDS(on) www.kexin.com.cn Max N-Ch 100 100 1 VDS = -16 V, VGS = 0 V P-Ch -1 VDS = 16 V, VGS = 0 V, TJ = 85 N-Ch 5 VDS = -16 V, VGS = 0 V, TJ = 85 P-Ch -5 VDS 5 V, VGS = 4.5 V N-Ch 0.6 VDS -5 V, VGS = -4.5 V P-Ch -1.0 0.320 0.385 VGS = -4.5 V, ID = -0.41A P-Ch 0.850 0.995 VGS = 2.5 V, ID = 0.40A N-Ch 0.560 0.630 VGS = -2.5 V, ID = -0.25A P-Ch VDS = 10 V, ID = 0.66A N-Ch 1.5 VDS = -10 V, ID = - 0.41A P-Ch 0.8 1.4 mS IS = 0.23A, VGS = 0 V N-Ch 0.8 1.2 P-Ch -0.8 -1.2 N-Channel N-Ch 0.8 1.2 VDS = 10 V, VGS = 4.5 V, ID = 0.66A P-Ch 1.2 1.8 N-Ch 0.06 P-Channel P-Ch 0.45 VDS = -10 V, VGS = -4.5 V, ID =- 0.41A N-Ch 0.30 P-Ch 0.25 N-Ch 10 20 VDD = 10 V, RL = 20 P-Ch 7.5 15 ID= 0.5 A, VGEN = 4.5V, Rg = 6 N-Ch 16 30 P-Ch 20 40 P-Channel N-Ch 10 20 VDD = -10 V, RL = 20 P-Ch 8.5 17 ID= -0.5 A, VGEN = -4.5 V, Rg = 6 N-Ch 10 20 P-Ch 12 24 N-Ch 20 40 P-Ch 25 40 IF = -0.23 A, di/dt = 100 A/ 300 s, duty cycle 2%. s s A 1.800 IS = -0.23A, VGS = 0 V IF = 0.23 A, di/dt = 100 A/ nA A N-Ch N Channel Unit V P-Ch VGS = 4.5 V, ID = 0.66A Drain Source On State Resistance* Typ N-Ch VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current Min V pC ns