Transistors IC SMD Type N- and P-Channel 30-V (D-S) MOSFET KI4539ADY PIN Configuration Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 secs Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 70 Pulsed Drain Current P-Channel Steady State 30 Maximum Power Dissipation* TA = 25 IS PD TA = 70 Operating Junction and Storage Temperature Range Unit Steady State -30 20 V 20 V 5.9 4.4 -4.9 -3.7 A 4.7 3.6 -3.9 -2.9 A IDM Continuous Source Current (Diode Conduction)* 10 secs A 30 1.7 0.9 -1.7 -0.9 A 2 1.1 2 1.1 W 1.3 0.7 1.3 0.7 W -55 to 150 TJ, Tstg *Surface Mounted on 1" X 1" FR4 Board. Absolute Maximum Ratings TA = 25 Parameter Maximum Junction-to-Ambient * Symbol t 10 sec RthJA Steady State Maximum Junction-to-Foot(Drain) Steady State RthJF N-Channel P-Channel Typ Max Typ Max 50 62.5 52 62.5 90 110 90 110 40 40 32 40 Unit /W *Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 Transistors IC SMD Type KI4539ADY Electrical Characteristics TJ = 25 Parameter Symbol Gate Threshold Voltage VGS( th) IGSS Gate Body Leakage Zero Gate Voltage Drain Current IDSS ID(on) On State Drain Currenta Testconditons VDS = VGS, ID = 250 A N-Ch 1 VDS = VGS, ID = -250 P-Ch -1 A Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Gate Resistance Rg Turn On Time td(on) tr Rise Time td( off) Turn Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width 2 rDS(on) www.kexin.com.cn Typ Max N-Ch 100 VDS = 0 V VGS = 20 V P-Ch 100 VDS = 24V, VGS = 0 V N-Ch 1 VDS = -24V, VGS = 0 V P-Ch -1 VDS = 24 V, VGS = 0 V, TJ = 55 N-Ch 5 VDS = -24V, VGS = 0 V, TJ = 55 P-Ch -5 VDS 5 V, VGS = 10 V N-Ch 30 VDS -5 V, VGS = -10 V P-Ch -30 N-Ch 0.032 0.036 0.043 0.053 VGS = -10 V, ID = -4.9A P-Ch N-Ch 0.042 0.053 VGS = -4.5 V, ID = -3.7A P-Ch 0.075 0.090 VDS = 15 V, ID = 5.9A N-Ch 15 VDS = -15 V, ID = -4.9A P-Ch 9 IS = 1.7A, VGS = 0 V N-Ch 0.80 1.2 IS = -1.7A, VGS = 0 V P-Ch -0.80 -1.2 N-Channel N-Ch 13 20 VDS = 15 V, VGS = 10V, ID = 5.9A P-Ch 15 25 N-Ch 2.3 P-Channel P-Ch 4 VDS = -15 V, VGS = -10 V, ID = -4.9A N-Ch 2 P-Ch 2.0 N-Ch 0.5 2.2 P-Ch 5 12.6 N-Ch 6 12 P-Ch 7 15 ID= 1A, VGEN = 10V, Rg = 6 N-Ch 14 25 P-Ch 10 20 P-Channel N-Ch 30 60 VDD = -15 V, RL = 15 P-Ch 40 80 ID= -1 A, VGEN = -10 V, Rg = 6 N-Ch 5 10 P-Ch 20 40 300 s, duty cycle 2%. s V nC VDD = 15 V, RL = 15 s A S N Channel IF = 1.7 A, di/dt = 100 A/ nA A VGS = 4.5 V, ID = 4.9A IF = -1.7 A, di/dt = 100 A/ Unit V VDS = 0 V VGS = 20 V VGS = 10 V, ID = 5.9A Drain Source On State Resistance* Min N-Ch 30 60 P-Ch 30 60 ns