Transistors IC SMD Type Complementary MOSFET Half-Bridge (N- and P-Channel) KI4501DY PIN Configuration Absolute Maximum Ratings TA = 25 Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 -8 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 70 Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)8 Maximum Power Dissipation* TA = 25 8 V 9 6.2 A 7.4 5.0 A 30 20 A -1.7 A PD TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board;t V 20 1.7 IS Unit 2.5 W 1.6 W -55 to 150 TJ, Tstg 10 sec Thermal Resistance Ratings TA = 25 Parameter Maximum Junction-to-Ambient* Symbol t 10 sec RthJA Steady State Maximum Junction-to-Foot Steady State RthJc N-Channel P-Channel Unit Typ Max Typ Max 38 50 40 50 73 95 73 95 17 22 20 26 /W *Surface Mounted on FR4 Board. www.kexin.com.cn 1 Transistors IC SMD Type KI4501DY Electrical Characteristics TJ = 25 Parameter Symbol Gate Threshold Voltage VGS( th) Gate Body Leakage IGSS Zero Gate Voltage Drain Current ID(on) On State Drain Currenta Drain Source On State Resistance* rDS(on) Forward Transconductance* gfs Diode Forward Voltage* VSD Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn On Time td(on) Rise Time tr td( off) Turn Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr * Pulse test; pulse width 2 IDSS www.kexin.com.cn Testconditons Min VDS = VGS, ID = 250 A N-Ch 0.8 VDS = VGS, ID = -250 P-Ch -0.45 A Typ Max V N-Ch 100 VDS = 0 V VGS = 8 V P-Ch 100 VDS = 24V, VGS = 0 V N-Ch 1 VDS = -6.4V, VGS = 0 V P-Ch -1 VDS = 24 V, VGS = 0 V, TJ = 55 N-Ch 5 VDS = -6.4V, VGS = 0 V, TJ = 55 P-Ch -5 VDS =5 V, VGS = 10 V N-Ch 30 VDS =-5 V, VGS = -4.5 V P-Ch -20 VGS = 10 V, ID = 9A N-Ch 0.015 0.018 0.034 0.042 VDS = 0 V VGS = 20 V VGS = -4.5 V, ID = -6.2A P-Ch N-Ch 0.022 0.027 VGS = -2.5 V, ID = -5.2A P-Ch 0.048 0.060 VDS = 15 V, ID = 9A N-Ch 20 VDS = -15 V, ID = -6.2A P-Ch 14 IS = 1.7A, VGS = 0 V N-Ch 0.71 1.1 P-Ch -0.70 -1.1 N-Channel N-Ch 4.5 20 25 P-Ch 15 N-Ch 3.3 P-Channel P-Ch 3.0 VDS = -4 V, VGS = -5 V, ID = -6.2A N-Ch 6.6 P-Ch 2.0 N Channel N-Ch 13 20 VDD = 15 V, RL = 15 P-Ch 20 40 ID= 1A, VGEN = 10V, Rg = 6 N-Ch 9 18 P-Ch 50 100 N-Ch 35 50 VDD = -4 V, RL = 4 P-Ch 110 220 ID= -1 A, VGEN = -4.5 V, Rg = 6 N-Ch 17 30 P-Ch 60 120 N-Ch 35 70 P-Ch 60 100 300 s, duty cycle 2%. V pC P-Channel s A S IS = -1.7A, VGS = 0 V IF = 1.7 A, di/dt = 100 A/ nA A VGS = 4.5 V, ID = 7.4A VDS = 15 V, VGS = 5V, ID = 9A Unit ns