IC MOSFET SMD Type MOS Field Effect Transistor 2SK2033 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High input impedance. 0.4 3 1 0.55 Enhancement-Mode +0.1 1.3-0.1 +0.1 2.4-0.1 Low gate threshold voltage :Vth=0.5 to 1.5V 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS 10 V Drain current ID 100 mA Power dissipation PD 200 mW Channel temperature Tch 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=10V,VGS=0 1 A Gate leakage current IGSS VGS=20V,VDS=0 1 A Gate threshold voltage Vth VDS=3V,ID=0.1mA 0.5 Forward transfer admittance Yfs VDS=3V,ID=10mA 25 Drain to source on-state resistance RDS(on) VGS=2.5V,ID=10mA Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Turn-off delay time td(off) VDS=3V,VGS=0,f=1MHZ ID=10mA,VGS(on)=2.5V,VDD=3V 1.5 50 8 V ms 12 8.5 pF 3.3 pF 9.3 pF 0.16 s 0.15 s Marking Marking KP www.kexin.com.cn 1