Transistors SMD Type Power MOSFET 200 mA, 50 V KSS138 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 N-Channel SOT-23 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1 Gate 1.Base 0-0.1 +0.1 0.38-0.1 2 Source 2.Emitter 3 Drain 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain-to-source voltage Parameter VDSS 50 V Gate-to-source voltage - continuous VGS Drain Current continuous @ TA = 25 pulsed drain current (tp 10 ìs) Total power dissipation @ TA = 25 Operating and storage temperature range Thermal resistance,junction-to-ambient Maximum lead temperature for soldering purposes, for 10 seconds 20 V ID 200 mA IDM 800 mA PD 225 mW TJ, Tstg -55 to 150 RèJA 556 TL 260 /W www.kexin.com.cn 1 Transistors SMD Type KSS138 Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-source breakdown voltage Testconditons V(BR)DSS VGS = 0 V, ID = 250 ìA Zero gate voltage drain current IDSS Gate-source leakage current IGSS Gate-source threshold voltage * Static drain-to-source on-rResistance * Min Typ 50 VDS = 25 V, VGS = 0 0.1 ìA VDS = 50 V, VGS = 0 0.5 ìA VGS = 20 V, VDS = 0 VGS(th) VDS = VGS, ID = 1.0 mA rDS(on) VGS = 2.75 V, ID < 200 mA, TA = -40 to +85 Input capacitance Ciss Output capacitance Coss Transfer capacitance Crss Turn-on delay time td(on) Turn-off delay time td(off) * Pulse Width 300 ìs, Duty Cycle Marking Marking 2 gfs J1 www.kexin.com.cn 2%. Unit V 0.1 0.5 5.6 VGS = 5.0 V, ID = 200 mA Forward transconductance * Max VDS = 25 V, ID = 200 mA, f = 1.0 kHz VDS = 25 V, VGS = 0, f = 1 MHz VDD = 30 V, ID = 0.2 A ìA 1.5 V 10 Ù 3.5 Ù 100 mmhos 40 50 pF 12 25 pF 3.5 5 pF 20 ns 20 ns