POWERSEM PSHI50-12

ECO-PACTM 2
PSHI 50/12*
IGBT Module
IC25
= 49 A
VCES
= 1200 V
VCE(sat)typ. = 3.1 V
Preliminary Data Sheet
F10
K10
K13
H13
A1
S18
N9
NTC
P18
PSHI 50/12*
*NTC optional
IGBTs
Symbol
Conditions
Maximum Ratings
VCES
TVJ = 25°C to 150°C
VGES
IC25
IC80
TC = 25°C
TC = 80°C
ICM
VCEK
VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
tSC
(SCSOA)
VCE = VCES; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
non-repetitive
Ptot
TC = 25°C
Symbol
Conditions
VCE(sat)
IC = 50 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 1 mA; VGE = VCE
ICES
VCE = VCES;
IGES
VCE = 0 V; VGE = ± 20 V
td(on)
tr
td(off)
tf
Eon
Eoff
1200
V
± 20
V
49
33
A
A
50
VCES
A
10
µs
208
W
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
3.1
3.5
4.5
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 30 A
VGE = 15/0 V; RG = 47 Ω
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
RthJC
RthJH
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
3.7
V
V
6.5
V
1.1
4.2
mA
mA
180
nA
100
70
500
70
4.6
3.4
ns
ns
ns
ns
mJ
mJ
1.65
nF
1.2
0.6 K/W
K/W
Features
•
•
•
•
•
Package with DCB ceramic base plate
Isolation voltage 3000 V∼
Planar glass passivated chips
Low forward voltage drop
•
UL registered, E 148688
Leads suitable for PC board
soldering
Applications
•
•
•
AC motor control
AC servo and robot drives
power supplies
Advantages
•
•
•
•
•
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
Caution: These Devices are sensitive
to electrostatic discharge. Users
should observe proper ESD handling
precautions.
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSHI 50/12
Reverse diodes (FRED)
Package style and outline
Symbol
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
Symbol
Conditions
VF
IF = 30 A;
IRM
trr
IF = 30 A; diF/dt = 500 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
27
150
A
ns
RthJC
RthJH
with heatsink compound (0.42 K/m.K; 50 µm)
2.6
1.3 K/W
K/W
49
31
Dimensions in mm (1mm = 0.0394“)
A
A
Characteristic Values
min.
typ. max.
TVJ = 25°C
TVJ = 125°C
2.4
1.77
2.7
V
V
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min. typ.
max.
R25
B25/50
T = 25°C
455
470
3474
485 kΩ
K
Module
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
-40...+150
-40...+150
°C
°C
VISOL
IISOL ≤ 1 mA; 50/60 Hz
3000
V~
Md
Mounting torque (M4)
a
Max. allowable acceleration
1.5 - 2.0
14 - 18
50
Nm
lb.in.
m/s 2
Symbol
Conditions
Characteristic Values
min. typ. max.
dS
dA
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
11.2
11.2
Weight
mm
mm
24
g
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSHI 50/12
80
80
A
IC
60
VGE = 17V
15V
13V
A
VGE = 17 V
15 V
13 V
IC
60
11V
11V
40
40
TVJ = 25°C
20
9V
20
9V
TVJ = 125°C
0
42T120
0
1
2
3
4
5
0
6 V 7
42T120
0
1
2
3
4
5
VCE
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
80
50
A
IC
6 V 7
VCE
60
IF
VCE = 20V
40
A
30
40
TVJ = 125°C
TVJ = 25°C
20
20
TVJ = 125°C
0
10
TVJ = 25°C
42T120
4
6
8
10
12
0
14 V 16
42T120
0
1
2
3
4
V
VF
VGE
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
200
50
20
trr
V
15
40
A
160
ns
30
120
IRM
VGE
10
VCE = 600V
IC = 25A
TVJ = 125°C
VR = 600 V
IF = 15 A
20
5
trr
80
40
10
IRM
0
42T120
0
40
80
120
QG
Fig. 5 Typ. turn on gate charge
nC
160
0
42T120
0
200
400
600
A/µs
800
0
1000
-di/dt
Fig. 6 Typ. turn off characteristics of
free wheeling diode
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSHI 50/12
15
VCE = 600 V
VGE = ±15 V
mJ
Eon
RG = 47 Ω
TVJ = 125°C
10
150
12
ns
mJ
100 t
Eoff
600
8
tr
5
400 t
RG = 47Ω
TVJ = 125°C
td(on)
50
4
0
0
Eoff
200
Eon
0
42T120
0
20
40
60
A
tf
0
20
40
IC
IC
Fig. 7 Typ. turn on energy and switching
4
td(on)
mJ
Eon
3
tr
2
VCE = 600 V
VGE = ±15 V
IC = 25 A
TVJ = 125°C
1
42T120
0
60
A
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
160
8
ns
mJ
120
Eon
ns
td(off)
VCE = 600V
VGE = ±15V
t
Eoff
td(off)
6
Eoff
4
80
40
2
0
0
800
ns
600
t
400
VCE = 600 V
VGE = ±15 V
IC = 25 A
TVJ = 125°C
200
tf
0
42T120
0
20
40
80 Ω 100
60
42T120
0
20
40
60
RG
60
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
10
diode
K/W
A
ZthJC
RG = 47 Ω
TVJ = 125°C
40
1
IGBT
0,1
0,01
20
single pulse
0,001
0
0
Ω 100
RG
Fig. 9 Typ. turn on energy and switching
ICM
80
42T120
0
200
400
600
800 1000 1200 1400 V
0,0001
0,00001 0,0001 0,001
VCE
Fig. 11 Reverse biased safe operating area
MDI...50-12P1
0,01
0,1
1
s 10
t
Fig. 12
Typ. transient thermal impedance
RBSOA
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20