ECO-PACTM 2 PSHI 50/12* IGBT Module IC25 = 49 A VCES = 1200 V VCE(sat)typ. = 3.1 V Preliminary Data Sheet F10 K10 K13 H13 A1 S18 N9 NTC P18 PSHI 50/12* *NTC optional IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES IC25 IC80 TC = 25°C TC = 80°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff 1200 V ± 20 V 49 33 A A 50 VCES A 10 µs 208 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 3.1 3.5 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C Inductive load, TVJ = 125°C VCE = 600 V; IC = 30 A VGE = 15/0 V; RG = 47 Ω Cies VCE = 25 V; VGE = 0 V; f = 1 MHz RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) 3.7 V V 6.5 V 1.1 4.2 mA mA 180 nA 100 70 500 70 4.6 3.4 ns ns ns ns mJ mJ 1.65 nF 1.2 0.6 K/W K/W Features • • • • • Package with DCB ceramic base plate Isolation voltage 3000 V∼ Planar glass passivated chips Low forward voltage drop • UL registered, E 148688 Leads suitable for PC board soldering Applications • • • AC motor control AC servo and robot drives power supplies Advantages • • • • • Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSHI 50/12 Reverse diodes (FRED) Package style and outline Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 30 A; IRM trr IF = 30 A; diF/dt = 500 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 27 150 A ns RthJC RthJH with heatsink compound (0.42 K/m.K; 50 µm) 2.6 1.3 K/W K/W 49 31 Dimensions in mm (1mm = 0.0394“) A A Characteristic Values min. typ. max. TVJ = 25°C TVJ = 125°C 2.4 1.77 2.7 V V Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 455 470 3474 485 kΩ K Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+150 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M4) a Max. allowable acceleration 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 24 g 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSHI 50/12 80 80 A IC 60 VGE = 17V 15V 13V A VGE = 17 V 15 V 13 V IC 60 11V 11V 40 40 TVJ = 25°C 20 9V 20 9V TVJ = 125°C 0 42T120 0 1 2 3 4 5 0 6 V 7 42T120 0 1 2 3 4 5 VCE Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 80 50 A IC 6 V 7 VCE 60 IF VCE = 20V 40 A 30 40 TVJ = 125°C TVJ = 25°C 20 20 TVJ = 125°C 0 10 TVJ = 25°C 42T120 4 6 8 10 12 0 14 V 16 42T120 0 1 2 3 4 V VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 200 50 20 trr V 15 40 A 160 ns 30 120 IRM VGE 10 VCE = 600V IC = 25A TVJ = 125°C VR = 600 V IF = 15 A 20 5 trr 80 40 10 IRM 0 42T120 0 40 80 120 QG Fig. 5 Typ. turn on gate charge nC 160 0 42T120 0 200 400 600 A/µs 800 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSHI 50/12 15 VCE = 600 V VGE = ±15 V mJ Eon RG = 47 Ω TVJ = 125°C 10 150 12 ns mJ 100 t Eoff 600 8 tr 5 400 t RG = 47Ω TVJ = 125°C td(on) 50 4 0 0 Eoff 200 Eon 0 42T120 0 20 40 60 A tf 0 20 40 IC IC Fig. 7 Typ. turn on energy and switching 4 td(on) mJ Eon 3 tr 2 VCE = 600 V VGE = ±15 V IC = 25 A TVJ = 125°C 1 42T120 0 60 A Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 160 8 ns mJ 120 Eon ns td(off) VCE = 600V VGE = ±15V t Eoff td(off) 6 Eoff 4 80 40 2 0 0 800 ns 600 t 400 VCE = 600 V VGE = ±15 V IC = 25 A TVJ = 125°C 200 tf 0 42T120 0 20 40 80 Ω 100 60 42T120 0 20 40 60 RG 60 Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 10 diode K/W A ZthJC RG = 47 Ω TVJ = 125°C 40 1 IGBT 0,1 0,01 20 single pulse 0,001 0 0 Ω 100 RG Fig. 9 Typ. turn on energy and switching ICM 80 42T120 0 200 400 600 800 1000 1200 1400 V 0,0001 0,00001 0,0001 0,001 VCE Fig. 11 Reverse biased safe operating area MDI...50-12P1 0,01 0,1 1 s 10 t Fig. 12 Typ. transient thermal impedance RBSOA 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20