ECO-PACTM 2 IGBT Module PSIG 130/06 PSIS 130/06* PSSI 130/06* PSI 130/06* IC25 = 121 A VCES = 600 V VCE(sat)typ. = 2.3 V Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet L9 E2 NTC X15 K10 X16 NTC VX 18 X16 PSI 130/06* IK 10 NTC L9 T16 X15 X13 GH 10 X15 AC 1 OP 9 X16 L9 F1 IK 10 AC 1 PSIS 130/06* PSSI 130/06* *NTC optional IGBTs LMN S Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES 600 V ± 20 V IC25 IC80 TC = 25°C TC = 80°C 121 83 A A ICM VCEK VGE = ±15 V; RG = 2.2 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH 200 360 A V tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 2.2 Ω; TVJ = 125°C non-repetitive 10 µs Ptot TC = 25°C 379 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 130 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1.5 mA; VGE = VCE ICES VCE = VCES; IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff A IJK 2.3 2.6 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C Inductive load, TVJ = 125°C VCE = 300 V; IC = 80 A VGE = 15/0 V; RG = 2.2 Ω Cies VCE = 25 V; VGE = 0 V; f = 1 MHz RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) 2.9 V V 6.5 V 1.2 7.5 mA mA 400 nA 25 11 150 30 0.8 2.3 ns ns ns ns mJ mJ 4.2 nF 0.66 0.33 K/W K/W PSIG 130/06 Features • • • • • • Package with DCB ceramic base plate Isolation voltage 3000 V∼ Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL registered, E 148688 Applications • • • • AC and DC motor control AC servo and robot drives power supplies welding inverters Advantages • • • • • • Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Leads with expansion bend for stress relief Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSIS PSSI 130/06 Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 80 A; TVJ = 25°C TVJ = 125°C 1.85 1.40 IRM trr IF = 60 A; diF/dt = 500 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 28 100 A ns RthJC RthJH with heatsink compound (0.42 K/m.K; 50 µm) 1.32 0.66 K/W K/W 134.0 82.3 A A Package style and outline Dimensions in mm (1mm = 0.0394“) PSI Characteristic Values min. typ. max. 2.06 V V Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kΩ K Module Symbol Conditions PSSI Maximum Ratings TVJ Tstg -40...+150 -40...+150 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M4) a Max. allowable acceleration 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 24 g Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. PSIG PSIS 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20