ECO-PACTM 2 IGBT Module IC25 = 30 A VCES = 1200 V VCE(sat)typ. = 2.6 V PSIG 25/12 PSI 25/12* PSIS 25/12* PSSI 25/12* Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet LN 9 S18 A1 JK 10 P 9 L 9 PSIG 25/12 PSI 25/12* PSIS 25/12* PSSI 25/12* G 10 Conditions VCES TVJ = 25°C to 150°C NTC Maximum Ratings VGES 1200 V ± 20 V IC25 IC80 TC = 25°C TC = 80°C 30 21 A A ICM VCEK VGE = ±15 V; RG = 82 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH 35 A tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions X 16 IC = 0.6 mA; VGE = VCE ICES VCE = VCES; IGES VCE = 0 V; VGE = ± 20 V W typ. max. 2.6 2.9 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C td(on) tr td(off) tf Eon Eoff Inductive load, TVJ = 125°C VCE = 600 V; IC = 17.5 A VGE = 15/0 V; RG = 82 Ω Cies VCE = 25 V; VGE = 0 V; f = 1 MHz RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. R S 18 F 1 AC 1 AC 1 PSIS T 16 RS 18 N TC IK 10 X 16 (TVJ = 25°C, unless otherwise specified) VGE(th) PSSI L 9 Characteristic Values IC = 25 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IK 10 L 9 X 15 VCE(sat) X 15 N TC µs 130 min. X 18 X 15 VCES 10 X 13 K 10 X 16 Symbol PSI E 2 *NTC optional IGBTs PSIG Features 3.3 V V 6.5 V 0.9 3.7 mA mA 100 nA 100 75 500 70 2.7 2.1 ns ns ns ns mJ mJ 1 nF 1.92 0.96 K/W K/W • • • • • Package with DCB ceramic base plate Isolation voltage 3000 V∼ Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering • UL registered, E 148688 Applications • • • • AC and DC motor control AC servo and robot drives power supplies welding inverters Advantages • • • • • • Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Leads with expansion bend for stress relief 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSI PSIS PSSI 25/12 Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 17.5 A; TVJ = 25°C TVJ = 125°C 2.48 1.84 IRM trr IF = 15 A; diF/dt = 400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 16 130 A ns RthJC RthJH with heatsink compound (0.42 K/m.K; 50 µm) 4.6 2.3 K/W K/W 26 17 A A Package style and outline Dimensions in mm (1mm = 0.0394“) PSIG Characteristic Values min. typ. max. 2.79 V V Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. R25 B25/50 T = 25°C 4.75 max. 5.0 3375 5.25 kΩ K PSI Module Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz Md Mounting torque (M4) a Max. allowable acceleration Symbol Conditions -40...+150 -40...+150 °C °C 3000 V~ 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s 2 Characteristic Values min. typ. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Weight 11.2 11.2 mm mm 24 PSIS max. g PSSI 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSI PSIS PSSI 25/12 50 IC 50 VGE = 17V 15V 13V A 40 IC TVJ = 25°C 30 VGE = 17V 15V 13V A 40 TVJ = 125°C 30 11V 11V 20 20 10 25T120 0 0 1 2 3 4 25T120 0 0 6 V 7 5 9V 10 9V 1 2 3 4 6 V 7 5 VCE VCE Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 50 50 A 40 IF VCE = 20V IC 40 A 30 30 20 20 TVJ = 125°C TVJ = 25°C TVJ = 25°C TVJ = 125°C 10 10 25T120 0 4 6 8 10 12 25T120 0 0 14 V 16 1 2 3 V 4 VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 200 50 20 trr V 160 ns 40 A 15 IRM VCE = 600V IC = 15A VGE 120 30 TVJ = 125°C VR = 600V IF = 15A 10 20 5 80 40 10 IRM 25T120 0 0 20 40 60 80 nC QG Fig. 5 Typ. turn on gate charge 100 25T120 0 0 200 400 600 800 A/µs 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 trr PSIG PSI PSIS PSSI 25/12 Eon 6 120 6 mJ ns mJ td(on) 4 80 t Eoff 600 VCE = 600V VGE = ±15V 4 VCE = 600V VGE = ±15V tr 400 t Eoff RG = 82Ω TVJ = 125°C RG = 82Ω TVJ = 125°C 2 2 40 ns td(off) 200 Eon t 25T120 0 0 10 20 f 25T120 0 0 0 30 A 10 IC IC Fig. 7 Typ. turn on energy and switching 3 Eon Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 2,0 150 800 Eoff mJ mJ td(on) Eon 2 ns 100 t ns td(off) Eoff 1,5 tr VCE = 600V VGE = ±15V 50 IC = 15A TVJ = 125°C 1 25T120 0 0 20 40 60 80 100 VCE = 600V VGE = ±15V IC = 15A TVJ = 125°C 1,0 0,5 0,0 120 Ω 140 0 20 40 60 80 100 600 t 400 200 tf 0 RG 25T120 0 120 Ω 140 RG Fig. 9 Typ. turn on energy and switching 40 Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 10 diode K/W A ICM 0 30 A 20 30 ZthJC 1 IGBT 0,1 20 0,01 10 0,001 RG = 82 Ω TVJ = 125°C 25T120 0 0 200 400 600 800 1000 1200 1400 V VCE Fig. 11 Reverse biased safe operating area single pulse 0,0001 0,00001 0,0001 0,001 VDI...25-12P1 0,01 0,1 1 s 10 t Fig. 12 Typ. transient thermal impedance RBSOA 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20