ECO-TOPTM 1 IGBT Module IC80 = VCES = VCE(sat)typ. = PSII 30/12* Short Circuit SOA Capability Square RBSOA 33 A 1200 V 3.1 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 Symbol Conditions VCES TVJ = 25°C to 150°C VGES typical picture, for pin configuration see outline drawing t e e h s r e a t d a un d l e l t i v t i n t s e a t t m c n te odu elop r p dev V3 V6 IC25 IC80 TC = 25°C TC = 80°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff *NTC optional Maximum Ratings 1200 V ± 20 V 49 33 A A 50 VCES A 10 µs 208 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 3.1 3.5 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C Inductive load, TVJ = 125°C VCE = 600 V; IC = 30 A VGE = 15/0 V; RG = 47 Ω Cies VCE = 25 V; VGE = 0 V; f = 1 MHz RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) 3.7 V V 6.5 V 1.1 4.2 mA mA 180 nA 100 70 500 70 4.6 3.4 ns ns ns ns mJ mJ 1.65 nF 1.2 0.6 K/W K/W Features • • • • • • Package with DCB ceramic base plate Isolation voltage 3000 V∼ Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL Release applied Applications • • • • AC and DC motor control AC servo and robot drives Power supplies Welding inverters Advantages • • • • • Easy to mount with four screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Reverse diodes (FRED) Symbol Conditions IF25 IF80 TC = 25°C TC = 80°C 49 30 Symbol Conditions Characteristic Values min. typ. max. VF IF = 30 A; IRM trr IF = 30 A; diF/dt = 500 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 27 150 A ns with heatsink compound (0.42 K/m.K; 50 µm) 2.6 1.3 K/W K/W RthJC RthJH Maximum Ratings TVJ = 25°C TVJ = 125°C 2.4 1.77 A A 2.7 V V t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev Temperature Sensor NTC Symbol R25 B25/50 Module Symbol TVJ Tstg VISOL Md a Conditions Characteristic Values min. typ. max. T = 25°C 4.75 Conditions 5.0 3375 Maximum Ratings -40...+125 -40...+150 °C °C IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Mounting torque (M5) 3 26 50 Nm lb.in. m/s 2 Max. allowable acceleration Symbol dS dA Weight 5.25 kΩ K Conditions Characteristic Values min. typ. max. Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 mm mm 86 g Package style and outline Dimensions in mm (1mm = 0.0394“) 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 80 80 A 60 IC VGE = 17V 15V 13V A VGE = 17 V 15 V 13 V IC 60 11V 11V 40 40 TVJ = 25°C 20 0 TVJ = 125°C 42T120 0 1 2 3 4 0 6 V 7 5 9V 20 9V 0 1 2 3 4 5 VCE t e e h s r e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev Fig. 2 Typ. output characteristics 50 A 60 IC 6 V 7 VCE Fig. 1 Typ. output characteristics 80 42T120 IF VCE = 20V 40 A 30 40 TVJ = 125°C TVJ = 25°C 20 20 TVJ = 125°C 0 10 TVJ = 25°C 42T120 4 6 8 10 12 0 14 V 16 0 1 2 3 V 42T120 4 VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 50 20 200 trr V 15 40 A 160 ns 30 120 IRM VGE 10 VCE = 600V IC = 25A TVJ = 125°C VR = 600 V IF = 15 A 20 5 trr 80 40 10 IRM 0 42T120 0 40 80 120 QG Fig. 5 Typ. turn on gate charge nC 160 0 42T120 0 200 400 600 800 A/µs 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 15 VCE = 600 V VGE = ±15 V mJ Eon RG = 47 Ω TVJ = 125°C 10 150 12 ns mJ 100 t Eoff 600 8 tr 5 400 t RG = 47Ω TVJ = 125°C td(on) 50 4 0 0 Eoff 200 Eon 0 42T120 0 20 40 60 A tf 0 20 40 IC IC 4 td(on) mJ 3 42T120 0 60 A t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n p te odu elo pr dev Fig. 7 Typ. turn on energy and switching Eon ns td(off) VCE = 600V VGE = ±15V 160 8 ns mJ 120 Eon tr 2 VCE = 600 V VGE = ±15 V IC = 25 A TVJ = 125°C 1 Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current t Eoff td(off) 6 Eoff 4 80 VCE = 600 V VGE = ±15 V IC = 25 A TVJ = 125°C 2 40 800 ns 600 400 200 tf 0 42T120 0 20 40 60 80 0 0 Ω 100 42T120 0 20 40 60 RG Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 10 diode K/W A ICM ZthJC RG = 47 Ω TVJ = 125°C 40 1 IGBT 0,1 0,01 20 single pulse 0,001 0 0 Ω 100 RG Fig. 9 Typ. turn on energy and switching 60 80 42T120 0 200 400 600 800 1000 1200 1400 V 0,0001 0,00001 0,0001 0,001 VCE Fig. 11 Reverse biased safe operating area MDI...50-12P1 0,01 0,1 1 s 10 t Fig. 12 Typ. transient thermal impedance RBSOA 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 t