POWERSEM PSIS75/12

TM
ECO-PAC 2
IGBT Module
Preliminary Data Sheet
K10
X16
IGBTs
NTC
X15
NTC
VX 18
X16
PSI 75/12*
Symbol
Conditions
VCES
TVJ = 25°C to 150°C
X16
L9
F1
IK 10
AC 1
PSIS 75/12*
PSSI 75/12*
Maximum Ratings
VGES
IC25
IC80
TC = 25°C
TC = 80°C
ICM
VCEK
VGE = ±15 V; RG = 22 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
tSC
(SCSOA)
VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C
non-repetitive
Ptot
TC = 25°C
Symbol
Conditions
VCE(sat)
IC = 75 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 2 mA; VGE = VCE
ICES
VCE = VCES;
IGES
VCE = 0 V; VGE = ± 20 V
td(on)
tr
td(off)
tf
Eon
Eoff
1200
V
± 20
V
92
62
A
A
100
VCES
A
10
µs
379
W
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
2.7
3.0
4.5
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
RthJC
RthJH
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
3.2
V
V
6.5
V
LMN S
A IJK
PSIG 75/12
*NTC optional
Features
•
•
•
•
•
Package with DCB ceramic
base plate
Isolation voltage 3000 V∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
3.7 mA
12.5 mA
•
200
nA
Applications
100
70
500
70
9.1
6.7
ns
ns
ns
ns
mJ
mJ
Advantages
3.3
nF
0.66
0.33 K/W
K/W
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 60 A
VGE = 15/0 V; RG = 22 Ω
IK 10
NTC
L9
T16
X15
X13
GH 10
X15
AC 1
OP 9
L9
E2
IC25
= 92 A
VCES
= 1200 V
VCE(sat)typ. = 2.7 V
PSIG 75/12
PSI 75/12*
PSIS 75/12*
PSSI 75/12*
•
•
•
•
•
•
•
•
•
UL registered, E 148688
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
Easy to mount with two screws
Space and weight savings
Improved temperature and
power cycling capability
High power density
Small and light weight
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 75/12
Package style and outline
Reverse diodes (FRED)
Dimensions in mm (1mm = 0.0394“)
Symbol
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
103
65
Symbol
Conditions
Characteristic Values
min.
typ. max.
VF
IF = 60 A;
IRM
trr
IF = 60 A; diF/dt = 500 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
41
200
A
ns
RthJC
RthJH
with heatsink compound (0.42 K/m.K; 50 µm)
1.32
0.66 K/W
K/W
TVJ = 25°C
TVJ = 125°C
2.28
1.67
PSI
A
A
2.6
V
V
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min. typ. max.
R25
B25/50
T = 25°C
4.75
5.0
3375
5.25 kΩ
K
PSSI
Module
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
-40...+150
-40...+150
°C
°C
VISOL
IISOL ≤ 1 mA; 50/60 Hz
3000
V~
Md
Mounting torque (M4)
a
Max. allowable acceleration
1.5 - 2.0
14 - 18
50
Nm
lb.in.
m/s 2
Symbol
Conditions
Characteristic Values
min. typ. max.
dS
dA
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
11.2
11.2
Weight
mm
mm
24
PSIG
g
PSIS
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 75/12
120
TJ = 25°C
A
100
IC
120
A TJ = 125°C
100
VGE =17 V
15 V
13 V
80
VGE =17 V
15 V
IC
13 V
80
11 V
11 V
60
60
40
40
9V
9V
20
20
0
0,0
81T120
0,5
1,0
1,5
2,0
2,5
81T120
0
0,0
3,0 V
0,5
1,0
1,5
2,0
2,5
VCE
Fig. 1 Typ. output characteristics
120
IC
180
TJ = 125°C
TJ = 25°C
100
A
150
IF
80
90
40
60
20
30
81T120
5
6
7
8
9
10
TJ = 25°C
120
60
0
3,5 V
Fig. 2 Typ. output characteristics
VCE = 20 V
A
3,0
VCE
DWLP55-12
0
0,5
11 V
1,0
1,5
2,0
2,5
3,0 V
3,5
VF
VGE
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
300
120
20
V
A
VGE
15
IRM
VCE = 600 V
IC = 50 A
ns
trr
200
80
10
40
IRM
5
0
81T120
0
50
100
150
200
QG
250 nC
Fig. 5 Typ. turn on gate charge
0
TJ = 125°C
VR = 600 V
IF = 50 A
100
81T120
0
200
400
600
A/µs
800
0
1000
-di/dt
Fig. 6 Typ. turn off characteristics of
free wheeling diode
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
trr
PSIG PSI PSIS PSSI 75/12
Eon
24
120
mJ
ns
18
90
td(on)
12
Eoff
RG = 22 Ω
TJ = 125°C
40
60
80
Eoff ns
500
td(off)
400 t
6
VCE = 600 V
VGE = ±15 V
300
4
RG = 22 Ω
TJ = 125°C
200
30
2
81T120
20
600
8
VCE = 600 V
VGE = ±15 V
Eon
0
t
60
tr
6
0
12
mJ
10
100 A
0
0
81T120
0
20
40
60
IC
td(on)
IC = 50 A
TJ = 125°C
Eon 15
180
t
8
Eoff
60
81T120
ns
1200
Eoff
t
900
4
600
2
300
0 10 20 30 40 50 60 70 80 90 100 Ω
RG
0
0
120
A
100
81T120
tf
0 10 20 30 40 50 60 70 80 90 100 Ω
RG
0
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
1
K/W
0,1
ZthJC
80
diode
0,01
RG = 22 Ω
TJ = 125°C
VCEK < VCES
60
0,0001
20
81T120
0
200
400
600
IGBT
0,001
40
0
VGE = ±15 V
IC = 50 A
TJ = 125°C
6
Fig. 9 Typ. turn on energy and switching
ICM
1500
td(off)
120
tr
5
0
10
mJ VCE = 600 V
ns
Eon
10
0
100 A
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
240
VCE = 600 V
mJ V = ±15 V
GE
80
IC
Fig. 7 Typ. turn on energy and switching
20
100
tf
800 1000 1200 V
single pulse
0,00001
0,00001 0,0001
0,001
0,01
0,1
s
1
t
VCE
Fig. 11 Reverse biased safe operating area
VID...75-12P1
Fig. 12
Typ. transient thermal impedance
RBSOA
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20