TM ECO-PAC 2 IGBT Module Preliminary Data Sheet K10 X16 IGBTs NTC X15 NTC VX 18 X16 PSI 75/12* Symbol Conditions VCES TVJ = 25°C to 150°C X16 L9 F1 IK 10 AC 1 PSIS 75/12* PSSI 75/12* Maximum Ratings VGES IC25 IC80 TC = 25°C TC = 80°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 2 mA; VGE = VCE ICES VCE = VCES; IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff 1200 V ± 20 V 92 62 A A 100 VCES A 10 µs 379 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.7 3.0 4.5 Cies VCE = 25 V; VGE = 0 V; f = 1 MHz RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) 3.2 V V 6.5 V LMN S A IJK PSIG 75/12 *NTC optional Features • • • • • Package with DCB ceramic base plate Isolation voltage 3000 V∼ Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering 3.7 mA 12.5 mA • 200 nA Applications 100 70 500 70 9.1 6.7 ns ns ns ns mJ mJ Advantages 3.3 nF 0.66 0.33 K/W K/W VGE = 0 V; TVJ = 25°C TVJ = 125°C Inductive load, TVJ = 125°C VCE = 600 V; IC = 60 A VGE = 15/0 V; RG = 22 Ω IK 10 NTC L9 T16 X15 X13 GH 10 X15 AC 1 OP 9 L9 E2 IC25 = 92 A VCES = 1200 V VCE(sat)typ. = 2.7 V PSIG 75/12 PSI 75/12* PSIS 75/12* PSSI 75/12* • • • • • • • • • UL registered, E 148688 AC and DC motor control AC servo and robot drives power supplies welding inverters Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSI PSIS PSSI 75/12 Package style and outline Reverse diodes (FRED) Dimensions in mm (1mm = 0.0394“) Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 103 65 Symbol Conditions Characteristic Values min. typ. max. VF IF = 60 A; IRM trr IF = 60 A; diF/dt = 500 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 41 200 A ns RthJC RthJH with heatsink compound (0.42 K/m.K; 50 µm) 1.32 0.66 K/W K/W TVJ = 25°C TVJ = 125°C 2.28 1.67 PSI A A 2.6 V V Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kΩ K PSSI Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+150 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M4) a Max. allowable acceleration 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 24 PSIG g PSIS 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSI PSIS PSSI 75/12 120 TJ = 25°C A 100 IC 120 A TJ = 125°C 100 VGE =17 V 15 V 13 V 80 VGE =17 V 15 V IC 13 V 80 11 V 11 V 60 60 40 40 9V 9V 20 20 0 0,0 81T120 0,5 1,0 1,5 2,0 2,5 81T120 0 0,0 3,0 V 0,5 1,0 1,5 2,0 2,5 VCE Fig. 1 Typ. output characteristics 120 IC 180 TJ = 125°C TJ = 25°C 100 A 150 IF 80 90 40 60 20 30 81T120 5 6 7 8 9 10 TJ = 25°C 120 60 0 3,5 V Fig. 2 Typ. output characteristics VCE = 20 V A 3,0 VCE DWLP55-12 0 0,5 11 V 1,0 1,5 2,0 2,5 3,0 V 3,5 VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 300 120 20 V A VGE 15 IRM VCE = 600 V IC = 50 A ns trr 200 80 10 40 IRM 5 0 81T120 0 50 100 150 200 QG 250 nC Fig. 5 Typ. turn on gate charge 0 TJ = 125°C VR = 600 V IF = 50 A 100 81T120 0 200 400 600 A/µs 800 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 trr PSIG PSI PSIS PSSI 75/12 Eon 24 120 mJ ns 18 90 td(on) 12 Eoff RG = 22 Ω TJ = 125°C 40 60 80 Eoff ns 500 td(off) 400 t 6 VCE = 600 V VGE = ±15 V 300 4 RG = 22 Ω TJ = 125°C 200 30 2 81T120 20 600 8 VCE = 600 V VGE = ±15 V Eon 0 t 60 tr 6 0 12 mJ 10 100 A 0 0 81T120 0 20 40 60 IC td(on) IC = 50 A TJ = 125°C Eon 15 180 t 8 Eoff 60 81T120 ns 1200 Eoff t 900 4 600 2 300 0 10 20 30 40 50 60 70 80 90 100 Ω RG 0 0 120 A 100 81T120 tf 0 10 20 30 40 50 60 70 80 90 100 Ω RG 0 Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 1 K/W 0,1 ZthJC 80 diode 0,01 RG = 22 Ω TJ = 125°C VCEK < VCES 60 0,0001 20 81T120 0 200 400 600 IGBT 0,001 40 0 VGE = ±15 V IC = 50 A TJ = 125°C 6 Fig. 9 Typ. turn on energy and switching ICM 1500 td(off) 120 tr 5 0 10 mJ VCE = 600 V ns Eon 10 0 100 A Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 240 VCE = 600 V mJ V = ±15 V GE 80 IC Fig. 7 Typ. turn on energy and switching 20 100 tf 800 1000 1200 V single pulse 0,00001 0,00001 0,0001 0,001 0,01 0,1 s 1 t VCE Fig. 11 Reverse biased safe operating area VID...75-12P1 Fig. 12 Typ. transient thermal impedance RBSOA 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20