POWERSEM PSIG100/12

ECO-PACTM 2
IGBT Module
Short Circuit SOA Capability
Square RBSOA
IC25
= 138 A
VCES
= 1200 V
VCE(sat)typ. = 2.8 V
PSIG 100/12
PSIS 100/12*
PSSI 100/12*
Preliminary Data Sheet
X15
AC 1
LMN S
A IJK
NTC
L9
T16
X15
NTC
X16
PSIG 100/12
IK 10
X16
L9
F1
IK 10
AC 1
PSIS 100/12*
PSSI 100/12*
IGBTs
*NTC optional
Symbol
Conditions
Maximum Ratings
VCES
TVJ = 25°C to 150°C
VGES
1200
V
± 20
V
Features
•
•
•
•
•
Package with DCB ceramic
base plate
Isolation voltage 3000 V∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
IC25
IC80
TC = 25°C
TC = 80°C
138
94
A
A
ICM
VCEK
VGE = ±15 V; RG = 15 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
150
VCES
A
tSC
(SCSOA)
VCE = VCES; VGE = ±15 V; RG = 15 Ω; TVJ = 125°C
non-repetitive
10
µs
•
Ptot
TC = 25°C
568
W
Applications
Symbol
Conditions
VCE(sat)
IC = 125 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 3 mA; VGE = VCE
ICES
VCE = VCES;
IGES
VCE = 0 V; VGE = ± 20 V
td(on)
tr
td(off)
tf
Eon
Eoff
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
2.8
3.2
4.5
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 75 A
VGE = 15/0 V; RG = 15 Ω
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
RthJC
RthJH
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
3.4
V
V
6.5
V
5
16
mA
mA
320
nA
100
50
650
50
12.1
10.5
ns
ns
ns
ns
mJ
mJ
5.5
nF
0.44
0.22 K/W
K/W
•
•
•
•
UL registered, E 148688
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
Advantages
•
•
•
Easy to mount with two screws
Space and weight savings
Improved temperature and
power cycling capability
Caution: These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 100/12
Reverse diodes (FRED)
Symbol
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
154
97
Symbol
Conditions
Characteristic Values
min.
typ. max.
VF
IF = 75 A; TVJ = 25°C
TVJ = 125°C
2.2
1.6
IRM
trr
IF = 75 A; diF/dt = 750 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
79
220
A
ns
RthJC
RthJH
with heatsink compound (0.42 K/m.K; 50 µm)
0.9
0.45 K/W
K/W
A
A
2.5
Package style and outline
Dimensions in mm (1mm = 0.0394“)
PSIG
V
V
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min. typ. max.
R25
B25/50
T = 25°C
4.75
5.0
3375
5.25 kΩ
K
PSSI
Module
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
-40...+150
-40...+150
°C
°C
VISOL
IISOL ≤ 1 mA; 50/60 Hz
3000
V~
Md
Mounting torque (M4)
a
Max. allowable acceleration
1.5 - 2.0
14 - 18
50
Nm
lb.in.
m/s 2
Symbol
Conditions
Characteristic Values
min. typ. max.
dS
dA
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
11.2
11.2
Weight
mm
mm
24
PSIS
g
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 100/12
175
A
150
175
VGE=17V
15V
TJ = 25°C
13V
IC 125
13V
IC 125
11V
100
VGE=17V
15V
TJ = 125°C
A
150
11V
100
75
75
50
9V
50
9V
25
25
0
0,0
121T120
0,5
1,0
1,5
2,0
2,5
121T120
0
0,0
3,0 V
0,5
1,0
1,5
2,0
2,5
VCE
Fig. 1 Typ. output characteristics
150
IC
300
A
250
TJ = 25°C
IF
100
150
50
100
25
50
121T120
5
6
7
8
9
10
TJ = 125°C
TJ = 25°C
200
75
0
3,5 V
Fig. 2 Typ. output characteristics
VCE = 20V
125
A
3,0
VCE
121T120
0
0,5
11 V
1,0
1,5
2,0
2,5
3,0 V
3,5
VF
VGE
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
300
120
20
VCE = 600V
IC = 75A
V
A
IRM
VGE 15
ns
trr
trr
200
80
10
TJ = 125°C
VR = 600V
IF = 75A
40
IRM
5
0
121T120
0
100
200
300
QG
400
Fig. 5 Typ. turn on gate charge
nC
0
100
121T120
0
200
400
600
800
A/µs
0
1000
-di/dt
Fig. 6 Typ. turn off characteristics of
free wheeling diode
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 100/12
40
mJ
Eon
Eon
30
td(on)
tr
20
20
ns
mJ
120
t
0
50
100
150 A
400
VCE = 600V
VGE = ±15V
RG = 15Ω
200
TJ = 125°C
5
0
0
121T120
0
50
100
td(on)
VCE = 600V
VGE = ±15V
IC = 75A
TJ = 125°C
20
Eon
Eon
0
150 A
Fig. 8 Typ. turn off energy and switching
times versus collector current
ns
25
mJ
160
20
200
t
15
tr
10
tf
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
mJ
600
t
IC
25
ns
td(off)
10
80
121T120
800
Eoff
Eoff 15
VCE = 600V
VGE = ±15V 40
RG = 15Ω
TJ = 125°C
10
0
160
5
Eoff
120
15
80
10
40
5
2000
VCE = 600V
VGE = ±15V
IC = 75A
TJ = 125°C
ns
td(off)
1600
t
1200
Eoff
800
400
121T120
0
121T120
0
8
16
24
32
40
0
0
48 Ω 56
tf
0
8
16
24
RG
Fig. 9
40
0
48 Ω 56
RG
Typ. turn on energy and switching
times versus gate resistor
Fig.10 Typ. turn off energy and switching
times versus gate resistor
200
1
A
K/W
0,1
160
ICM
ZthJC
120
diode
0,01
RG = 15Ω
TJ = 125°C
VCEK < VCES
80
0,0001
121T120
0
200
400
600
IGBT
0,001
40
0
32
800 1000 1200 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
single pulse
0,00001
0,00001 0,0001
VID...125-12P1
0,001
0,01
0,1
s
1
t
Fig. 12 Typ. transient thermal impedance
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20