POWERSEM PSSI160/12

ECO-PACTM 2
IGBT Module
PSIG 160/12
PSIS 160/12*
PSSI 160/12*
IC25
= 169 A
VCES
= 1200 V
VCE(sat)typ. = 2.9 V
Short Circuit SOA Capability
Square RBSOA
Preliminary Data Sheet
X15
AC 1
LMN S
NTC
L9
T16
X15
A IJK
NTC
X16
PSIG 160/12
IK 10
X16
L9
F1
IK 10
AC 1
PSIS 160/12*
PSSI 160/12*
IGBTs
Symbol
Conditions
Maximum Ratings
VCES
TVJ = 25°C to 150°C
VGES
1200
V
± 20
V
IC25
IC80
TC = 25°C
TC = 80°C
169
117
A
A
ICM
VCEK
VGE = ±15 V; RG = 6.8 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
200
VCES
A
tSC
(SCSOA)
VCE = VCES; VGE = ±15 V; RG = 6.8 Ω; TVJ = 125°C
non-repetitive
10
µs
Ptot
TC = 25°C
694
W
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
VCE(sat)
IC = 160 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 4 mA; VGE = VCE
ICES
VCE = VCES;
IGES
VCE = 0 V; VGE = ± 20 V
td(on)
tr
td(off)
tf
Eon
Eoff
2.9
3.3
4.5
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 100 A
VGE = 15/0 V; RG = 6.8 Ω
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
RthJC
RthJH
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
100
60
600
90
16.1
14.6
6.5
0.36
3.5
V
6.5
V
6
19
mA
mA
400
nA
ns
ns
ns
ns
mJ
mJ
*NTC optional
Features
•
•
•
•
•
•
Package with DCB ceramic base plate
Isolation voltage 3000 V∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL registered, E 148688
Applications
•
•
•
•
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
Advantages
•
•
•
•
•
•
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
Leads with expansion bend for
stress relief
Caution: These Devices are
sensitive to electrostatic discharge.
0.18 K/W Users should observe proper ESD
K/W handling precautions.
nF
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 160/12
Reverse diodes (FRED)
Symbol
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
154
97
Symbol
Conditions
Characteristic Values
min.
typ. max.
VF
IF = 100 A; TVJ = 25°C
TVJ = 125°C
2.3
1.7
IRM
trr
IF = 75 A; diF/dt = 750 A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
79
220
A
ns
RthJC
RthJH
with heatsink compound (0.42 K/m.K; 50 µm)
0.9
0.45 K/W
K/W
A
A
2.7
Package style and outline
Dimensions in mm (1mm = 0.0394“)
PSIG
V
V
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min. typ.
max.
R25
B25/50
T = 25°C
4.75
5.0
3375
5.25 kΩ
K
PSSI
Module
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
-40...+150
-40...+150
°C
°C
VISOL
IISOL ≤ 1 mA; 50/60 Hz
3000
V~
Md
Mounting torque (M4)
a
Max. allowable acceleration
1.5 - 2.0
14 - 18
50
Nm
lb.in.
m/s 2
Symbol
Conditions
dS
dA
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
Weight
Characteristic Values
min. typ. max.
11.2
11.2
PSIS
mm
mm
24
g
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 160/12
250
IC
250
TJ = 25°C
A
200
15V
13V
150
TJ = 125°C
A
VGE=17V
VGE=17V
200
15V
IC
13V
150
11V
100
11V
100
9V
9V
50
0
0,0
50
156T120
0,5
1,0
1,5
2,0
2,5
VCE
0
0,0
3,0 V
Fig. 1 Typ. output characteristics
250
1,0
1,5
2,0
2,5 3,0
VCE
3,5 V
300
TJ = 25°C
200
0,5
Fig. 2 Typ. output characteristics
VCE = 20V
A
156T120
TJ = 125°C
A
250
IF
IC
150
TJ = 25°C
200
150
100
100
50
0
50
156T120
5
6
7
8
9
10
VGE
0
0,5
11 V
Fig. 3 Typ. transfer characteristics
20
V
156T120
1,0
1,5
2,0
2,5
VF
3,0 V
3,5
Fig. 4 Typ. forward characteristics of
free wheeling diode
300
120
VCE = 600V
IC = 100A
A
ns
IRM
VGE 15
trr
trr
200
80
10
40
IRM
5
0
156T120
0
100
200
300
400
QG
500 nC
Fig. 5 Typ. turn on gate charge
0
TJ = 125°C
VR = 600V
IF = 100A
100
156T120
0
200
400
600
800
A/µs
-di/dt
0
1000
Fig. 6 Typ. turn off characteristics of
free wheeling diode
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 160/12
40
mJ
Eon
30
Eon
40
ns
mJ
90
tr
20
t
20
RG = 6.8Ω
30
TJ = 125°C
10
156T120
0
50
100
150
200 A
800
0
0
50
Eon
VCE = 600V
mJ V = ±15V
GE
40
td(on)
IC = 100A
TJ = 125°C
Eon
tr
30
t
400
VCE = 600V
VGE = ±15V
RG = 6.8Ω
200
TJ = 125°C
156T120
0
50
100
150
IC
tf
0
200 A
Fig. 8 Typ. turn off energy and switching
times versus collector current
300
25
ns
mJ
240
t
20
Eoff
td(off)
VCE = 600V
VGE = ±15V
IC = 100A
TJ = 125°C
1500
ns
1200
Eoff
t
180
15
900
20
120
10
600
10
60
5
300
0
0
0
156T120
0
8
16
24
32
48 Ω 56
40
156T120
0
8
16
24
RG
40
0
48 Ω 56
Fig.10 Typ. turn off energy and switching
times versus gate resistor
240
1
A
K/W
0,1
200
ZthJC
160
0,0001
40
156T120
200
400
600
IGBT
0,001
80
0
diode
0,01
RG = 6.8Ω
TJ = 125°C
VCEK < VCES
120
0
32
tf
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
ICM
600
Eoff
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
ns
td(off)
Eoff 30
60
VCE = 600V
VGE = ±15V
10
0
120
td(on)
800 1000 1200 V
VCE
Fig. 11 Reverse biased safe operating area
RBSOA
single pulse
0,00001
0,00001 0,0001
VDI...160-12P1
0,001
0,01
0,1
s
1
t
Fig. 12 Typ. transient thermal impedance
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20