ECO-PACTM 2 IGBT Module PSIG 160/12 PSIS 160/12* PSSI 160/12* IC25 = 169 A VCES = 1200 V VCE(sat)typ. = 2.9 V Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet X15 AC 1 LMN S NTC L9 T16 X15 A IJK NTC X16 PSIG 160/12 IK 10 X16 L9 F1 IK 10 AC 1 PSIS 160/12* PSSI 160/12* IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES 1200 V ± 20 V IC25 IC80 TC = 25°C TC = 80°C 169 117 A A ICM VCEK VGE = ±15 V; RG = 6.8 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH 200 VCES A tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 6.8 Ω; TVJ = 125°C non-repetitive 10 µs Ptot TC = 25°C 694 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 160 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 4 mA; VGE = VCE ICES VCE = VCES; IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff 2.9 3.3 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C Inductive load, TVJ = 125°C VCE = 600 V; IC = 100 A VGE = 15/0 V; RG = 6.8 Ω Cies VCE = 25 V; VGE = 0 V; f = 1 MHz RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) 100 60 600 90 16.1 14.6 6.5 0.36 3.5 V 6.5 V 6 19 mA mA 400 nA ns ns ns ns mJ mJ *NTC optional Features • • • • • • Package with DCB ceramic base plate Isolation voltage 3000 V∼ Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL registered, E 148688 Applications • • • • AC and DC motor control AC servo and robot drives power supplies welding inverters Advantages • • • • • • Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Leads with expansion bend for stress relief Caution: These Devices are sensitive to electrostatic discharge. 0.18 K/W Users should observe proper ESD K/W handling precautions. nF 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSIS PSSI 160/12 Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 154 97 Symbol Conditions Characteristic Values min. typ. max. VF IF = 100 A; TVJ = 25°C TVJ = 125°C 2.3 1.7 IRM trr IF = 75 A; diF/dt = 750 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 79 220 A ns RthJC RthJH with heatsink compound (0.42 K/m.K; 50 µm) 0.9 0.45 K/W K/W A A 2.7 Package style and outline Dimensions in mm (1mm = 0.0394“) PSIG V V Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kΩ K PSSI Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+150 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M4) a Max. allowable acceleration 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s 2 Symbol Conditions dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Weight Characteristic Values min. typ. max. 11.2 11.2 PSIS mm mm 24 g 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSIS PSSI 160/12 250 IC 250 TJ = 25°C A 200 15V 13V 150 TJ = 125°C A VGE=17V VGE=17V 200 15V IC 13V 150 11V 100 11V 100 9V 9V 50 0 0,0 50 156T120 0,5 1,0 1,5 2,0 2,5 VCE 0 0,0 3,0 V Fig. 1 Typ. output characteristics 250 1,0 1,5 2,0 2,5 3,0 VCE 3,5 V 300 TJ = 25°C 200 0,5 Fig. 2 Typ. output characteristics VCE = 20V A 156T120 TJ = 125°C A 250 IF IC 150 TJ = 25°C 200 150 100 100 50 0 50 156T120 5 6 7 8 9 10 VGE 0 0,5 11 V Fig. 3 Typ. transfer characteristics 20 V 156T120 1,0 1,5 2,0 2,5 VF 3,0 V 3,5 Fig. 4 Typ. forward characteristics of free wheeling diode 300 120 VCE = 600V IC = 100A A ns IRM VGE 15 trr trr 200 80 10 40 IRM 5 0 156T120 0 100 200 300 400 QG 500 nC Fig. 5 Typ. turn on gate charge 0 TJ = 125°C VR = 600V IF = 100A 100 156T120 0 200 400 600 800 A/µs -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSIG PSIS PSSI 160/12 40 mJ Eon 30 Eon 40 ns mJ 90 tr 20 t 20 RG = 6.8Ω 30 TJ = 125°C 10 156T120 0 50 100 150 200 A 800 0 0 50 Eon VCE = 600V mJ V = ±15V GE 40 td(on) IC = 100A TJ = 125°C Eon tr 30 t 400 VCE = 600V VGE = ±15V RG = 6.8Ω 200 TJ = 125°C 156T120 0 50 100 150 IC tf 0 200 A Fig. 8 Typ. turn off energy and switching times versus collector current 300 25 ns mJ 240 t 20 Eoff td(off) VCE = 600V VGE = ±15V IC = 100A TJ = 125°C 1500 ns 1200 Eoff t 180 15 900 20 120 10 600 10 60 5 300 0 0 0 156T120 0 8 16 24 32 48 Ω 56 40 156T120 0 8 16 24 RG 40 0 48 Ω 56 Fig.10 Typ. turn off energy and switching times versus gate resistor 240 1 A K/W 0,1 200 ZthJC 160 0,0001 40 156T120 200 400 600 IGBT 0,001 80 0 diode 0,01 RG = 6.8Ω TJ = 125°C VCEK < VCES 120 0 32 tf RG Fig. 9 Typ. turn on energy and switching times versus gate resistor ICM 600 Eoff IC Fig. 7 Typ. turn on energy and switching times versus collector current ns td(off) Eoff 30 60 VCE = 600V VGE = ±15V 10 0 120 td(on) 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA single pulse 0,00001 0,00001 0,0001 VDI...160-12P1 0,001 0,01 0,1 s 1 t Fig. 12 Typ. transient thermal impedance 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20