RECTRON MMST5401 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP) FEATURES * Power dissipation O Pcm: 0.2 W (Tamb=25 C) * Collector current Icm: -0.2 A * Collector-base voltage V(BR)CBO: -160 V * Operationg and storage junction temperature range O O TJ,Tstg: -55 Cto +150 C SOT-323 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.006 gram 0.051(1.30) 0.047(1.20) REF .040(1.01) 0.092(2.35) 0.089(2.25) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.052(1.33) 0.050(1.27) Ratings at 25 o C ambient temperature unless otherwise specified. 0.081(2.05) 0.077(1.95) Dimensions in inches and (millimeters) o MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) SYMBOL VALUE UNITS - - - Max. Steady State Power Dissipation (1) PD 200 mW Max. Operating Temperature Range TJ 150 o C TSTG -55 to +150 o C Storage Temperature Range ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient (1) Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL MIN. TYP. MAX. R θJA - - 625 VF - - - NOTES : 1. Valid provided that terminals are kept at ambient temperature. UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (I C = -1.0mAdc, I B = 0) V(BR)CEO -150 - Vdc Collector-Base Breakdown Voltage (I C = -100µAdc, I E = 0) V(BR)CBO -160 - Vdc Emitter-Base Breakdown Voltage (I E = -10µAdc, I C = 0) OFF CHARACTERISTICS (2) V(BR)EBO -5 - Vdc Collector Cutoff Current (V CB = -120Vdc, I E = 0) ICBO - -50 nAdc Emitter Cutoff Current (V EB = -3.0Vdc, I C = 0) IEBO - -50 nAdc 50 - 60 240 50 - - -0.2 - -0.5 - -1 - -1 100 300 MHz ON CHARACTERISTICS (2) DC Current Gain (I C = -1mAdc, V CE = -5Vdc) (I C = -10mAdc, V CE = -5Vdc) hFE (I C = -50mAdc, V CE = -5Vdc) Collector-Emitter Saturation Voltage (I C = -10mAdc, I B = -1mAdc) (I C = -50mAdc, I B = -5mAdc) Base-Emitter Saturation Voltage (I C = -10mAdc, I B = -1mAdc) (I C = -50mAdc, I B = -5mAdc) VCE(sat) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = -10mAdc, V CE = -10Vdc, f= 100MHz) fT Output Capacitance (V CB = -10Vdc, I E = 0, f= 1.0MHz) Cob - 6 pF Small-Signal Current Gain (I C = -1.0mAdc, V CE = -10Vdc, f= 1.0kHz) hfe 40 200 - Noise figure (I C = -0.2mAdc, V CE = -5Vdc, f= 1.0kHz,Rg=10 Ω ) NF - 8 dB <300µs,Duty Cycle<2.0% NOTES : 2. Pulse Test: Pulse Width- RECTRON