SAMHOP STB432S

STB/P432S
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON).
PRODUCT SUMMARY
V DSS
R DS(ON) (m Ω) Max
ID
High power and current handling capability.
9 @ VGS=10V
40V
TO-220 & TO-263 package.
60A
11 @ VGS=4.5V
D
G
G
D
S
S
S TB S E R IE S
TO-263(DD-P AK)
S TP S E R IE S
TO-220
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
VDS
VGS
ID
IDM
EAS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
a
TC=25°C
b
-Pulsed
Sigle Pulse Avalanche Energy d
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
TC=25°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Limit
40
±20
Units
V
V
60
A
240
A
130
mJ
62.5
W
-55 to 150
°C
2
°C/W
50
°C/W
Jun,24,2008
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STB/P432S
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS c
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
c
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Conditions
Min
VGS=0V , ID=250uA
40
Diode Forward Voltage
1
±100
VGS= ±20V , VDS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=30A
VGS=4.5V , ID=28A
VDS=10V , ID=30A
VDS=15V,VGS=0V
f=1.0MHz
VDD=15V
ID=30A
VGS=10V
RGEN=3.3 ohm
Max
1
Units
V
VDS=32V , VGS=0V
uA
nA
1.7
7
3
9
V
m ohm
9
26
11
m ohm
S
1600
280
150
pF
pF
pF
20
21
ns
ns
ns
ns
45
16
VDS=15V,ID=30A,VGS=10V
32
nC
VDS=15V,ID=28A,VGS=4.5V
15
3.5
7.3
nC
VDS=15V,ID=30A,
VGS=10V
Gate-Drain Charge
c
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuous Drain-Source Diode Forward Current
IS
VSD
Typ
VGS=0V,IS=30A
0.95
nC
nC
30
A
1.3
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=1.25mH,RG=25Ω,VDD = 20V.(See Figure13)
Jun,24,2008
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STB/P432S
Ver 1.0
60
20
V G S =4 V
T j =125 C
I D, Drain Current(A)
I D, Drain Current(A)
50
V G S = 4.5V
40
V G S = 10V
30
20
V G S =3 V
10
15
-55 C
10
25 C
5
V G S = 2.5V
0
0
0
0.5
1
2
1.5
2.5
3
0
V DS, Drain-to-Source Voltage(V)
3.2
4.0
4.8
Figure 2. Transfer Characteristics
15
R DS(on), On-Resistance
Normalized
2.0
12
R DS(on)(m Ω)
2.4
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
V G S = 4.5V
9
6
V G S = 10V
3
1
1.6
0.8
1
12
24
36
48
1.8
1.6
V G S =4.5V
I D =28A
1.2
1.0
0
60
V G S =10V
I D =30A
1.4
0
25
50
100
75
125
150
T j ( °C )
ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.3
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature( ° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Jun,24,2008
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STB/P432S
Ver 1.0
30
20.0
Is, Source-drain current(A)
ID=30A
R DS(on)(m Ω)
25
20
75 C
15
125 C
10
25 C
5
0
2
4
6
8
75 C
125 C
25 C
10
0.24
0
1.2
0.96
0.72
0.48
V GS, Gate-to-Source Voltage(V)
V SD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V GS, Gate to Source Voltage(V)
2000
C, Capacitance(pF)
5.0
1.0
0
2400
C is s
1600
1200
800
C os s
400
C rs s
0
0
5
10
15
20
25
30
V DS =15V
I D =30A
8
6
4
2
0
0
5
10
15
20
25
30
35 40
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
220
1000
T D(off)
100
60
Tr
T D(on)
I D, Drain Current(A)
Switching Time(ns)
10.0
Tf
10
V DS =15V ,ID=30A
1
100
R
6 10
Rg, Gate Resistance(Ω)
it
10
1m
10
m
0u
s
s
s
10
1
0.1
60 100 300 600
(
L im
DC
V G S =10V
1
DS
)
ON
V G S =10V
S ingle P ulse
T c=25 C
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Figure 11. switching characteristics
Jun,24,2008
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STB/P432S
Ver 1.0
V ( BR )D S S
15V
tp
L
VDS
DR IV E R
D .U .T
RG
+
- VD D
IA S
A
20V
0.0 1
tp
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
Figure 13b.
Figure 13a.
r(t),Normalized Effective
Transient Thermal Impedance
2
1
D=0.5
0.2
0.1
0.1
P DM
0.05
t1
0.02
t2
0.01
1.
2.
3.
4.
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
0.1
R J C (t)=r (t) * R J C
R J C =S ee Datas heet
T J M-T C = P * R J C (t )
Duty C ycle, D=t1/t2
1
10
Square Wave Pulse Duration (msec)
Figure 14. Normalized Thermal Transient Impedance Curve
Jun,24,2008
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STB/P432S
Ver 1.0
Jun,24,2008
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STB/P432S
Ver 1.0
Jun,24,2008
7
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STB/P432S
Ver 1.0
TO-220/263AB Tube
Jun,24,2008
8
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