SavantIC Semiconductor Product Specification 2N5660 2N5661 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High breakdown voltage APPLICATIONS ·High speed switching and linear amplifier ·High-voltage operational amplifiers ·Switching regulators ,converters ·Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2N5660 VCBO Collector-base voltage 200 Open base 2N5661 VEBO V 400 2N5660 Collector-emitter voltage Emitter-base voltage UNIT 250 Open emitter 2N5661 VCEO VALUE V 300 Open collector 6 V IC Collector current 2.0 A IB Base current 0.5 A PT Total power dissipation TC=100 20 Ta=25 2 W Tj Junction temperature 200 Tstg Storage temperature -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT /W SavantIC Semiconductor Product Specification 2N5660 2N5661 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2N5660 MIN TYP. MAX UNIT 200 IC=10mA ; IB=0 V 300 2N5661 V(BR)EBO Emitter-base breakdown voltage IE=10µA ; IC=0 VCEsat-1 Collector-emitter saturation voltage IC=1A; IB=0.1A 0.4 V VCEsat-2 Collector-emitter saturation voltage IC=2A; IB=0.4A 0.8 V VBEsat-1 Base-emitter saturation voltage IC=1A ;IB=0.1A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=2A; IB=0.4A 1.5 V 0.2 mA 1.0 mA ICES ICBO 2N5660 VCE=200V;VBE(off)=1.5V 2N5661 VCE=300V;VBE(off)=1.5V 2N5660 VCB=250V; IE=0 2N5661 VCB=400V; IE=0 Collector cut-off current Collector cut-off current 2N5660 hFE-1 DC current gain 40 25 2N5660 40 120 25 75 IC=0.5A ; VCE=5V DC current gain 2N5661 hFE-3 DC current gain IC=1A ; VCE=5V 15 hFE-4 DC current gain IC=2A ; VCE=5V 5 COB Output capacitance IE=0 ; VCB=10V;f=1MHz ton toff V IC=50mA ; VCE=2V 2N5661 hFE-2 6 45 pF 0.25 µs 2N5660 VCC=100V;IC=0.5A;IB1=-IB2=15mA 2N5661 VCC=100V;IC=0.5A;IB1=-IB2=25mA 2N5660 VCC=100V;IC=0.5A;IB1=-IB2=15mA 0.85 2N5661 VCC=100V;IC=0.5A;IB1=-IB2=25mA 1.2 Turn-on time Turn-off time µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2N5660 2N5661