SAVANTIC TIP147

SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP145/146/147
DESCRIPTION
·With TO-3PN package
·DARLINGTON
·High DC current gain
·Complement to type TIP140/141/142
APPLICATIONS
·Designed for general–purpose amplifier and
low frequency switching applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
TIP145
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
TIP146
Open emitter
Emitter-base voltage
IC
-80
TIP147
-100
TIP145
-60
TIP146
UNIT
-60
Open base
TIP147
VEBO
VALUE
-80
V
V
-100
Open collector
-5
V
Collector current-DC
-10
A
ICM
Collector current-peak
-15
A
IB
Base current-DC
-0.5
A
PC
Collector power dissipation
125
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance junction to case
1.0
/W
Rth j-A
Thermal resistance case to ambient
35.7
/W
SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
TIP145/146/147
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TIP145
VCEO(SUS)
Collector-emitter
sustaining voltage
TIP146
MIN
TYP.
MAX
UNIT
-60
IC=-30mA, IB=0
TIP147
V
-80
-100
VCE(sat)-1
Collector-emitter saturation voltage
IC=-5A ,IB=-10mA
-2.0
V
VCE(sat)-2
Collector-emitter saturation voltage
IC=-10A ,IB=-40mA
-3.0
V
Base-emitter saturation voltage
IC=-10A ,IB=-40mA
-3.5
V
Base-emitter on voltage
IC=-10A ; VCE=-4V
-3.0
V
-1
mA
-2
mA
-2
mA
VBE(sat)
VBE
ICBO
ICEO
Collector cut-off current
Collector cut-off current
TIP145
VCB=-60V, IE=0
TIP146
VCB=-80V, IE=0
TIP147
VCB=-100V, IE=0
TIP145
VCE=-30V, IB=0
TIP146
VCE=-40V, IB=0
TIP147
VCE=-50V, IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-5A ; VCE=-4V
1000
hFE-2
DC current gain
IC=-10A ; VCE=-4V
500
Switching times
td
Delay time
tr
Rise time
tstg
tf
Storage time
VCC =-30 V, IC = -5.0 A,
IB =-20 mA ;Duty CycleE20%
IB1 = IB2, RC & RB Varied,
TJ = 25
Fall time
2
0.15
µs
0.55
µs
2.5
µs
2.5
µs
SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)
3
TIP145/146/147
SavantIC Semiconductor
Product Specification
Silicon PNP Darlington Power Transistors
4
TIP145/146/147