SavantIC Semiconductor Product Specification 2SB1373 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2066 ·Wide area of safe operation APPLICATIONS ·For high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V -12 A IC Collector current PC Collector power dissipation TC=25 120 Ta=25 2.5 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1373 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-8A; IB=-0.8A -2.0 V VBE Base-emitter on voltage IC=-8A;VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-160V; IE=0 -50 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 µA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-1A ; VCE=-5V 60 hFE-3 DC current gain IC=-8A ; VCE=-5V 20 Transition frequency IC=-0.5A ; VCE=-5V 15 MHz Collector output capacitance IE=0; f=1MHz;VCB=-10V 400 pF fT COB CONDITIONS hFE-1 Classifications Q S P 60-120 80-160 100-200 2 MIN TYP. MAX -160 UNIT V 200 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SB1373