SAVANTIC 2SA1129

SavantIC Semiconductor
Product Specification
2SA1129
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2654
·Low collector saturation votage
APPLICATIONS
·For low-frequency power amplifiers and
mid-speed switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-30
V
VCEO
Collector-emitter voltage
Open base
-30
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current (DC)
-7
A
ICM
Collector current-peak
-15
A
IB
Base current (DC)
-3.5
A
PT
Total power dissipation
TC=25
40
Ta=25
1.5
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SA1129
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCE(sat)-1
Collector-emitter saturation voltage
IC=-3A ;IB=-0.1A
-0.3
V
VCE(sat)-2
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
-0.6
V
VBE(sat)-1
Base-emitter saturation voltage
IC=-3A ;IB=-0.1A
-1.5
V
VBE(sat)-2
Base-emitter saturation voltage
IC=-5A ;IB=-0.5A
-2.0
V
ICBO
Collector cut-off current
VCB=-30V; IE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
µA
hFE-1
DC current gain
IC=-3A ; VCE=-1V
40
hFE-2
DC current gain
IC=-5A ; VCE=-1V
20
200
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5.0A
IB1=-0.5 A ,IB2=0.5A
VCC=20V, RL=4.0?
hFE-1 Classifications
M
L
K
40-80
60-120
100-200
2
1.0
µs
2.5
µs
1.0
µs
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
2SA1129