SavantIC Semiconductor Product Specification BDX67B Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current capability ·DARLINGTON APPLICATIONS ·Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 16 A ICM Collector current(peak) 20 A IB Base current 0.25 A PT Total power dissipation 117 W Tj Junction temperature 150 Tstg Storage temperature -55~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX UNIT 1.17 /W SavantIC Semiconductor Product Specification BDX67B Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) VCEsat TYP. MAX UNIT Collector-emitter sustaining voltage IC=0.1A ; IB=0;L=25mH 100 Collector-emitter saturation voltage IC=10A ;IB=0.04A 2 V ICBO Collector cut-off current VCB=60V; IE=0 TC=150 1 5 mA ICEO Collector cut-off current VCE=50V; IB=0 3 mA IEBO Emitter cut-off current VEB=5V; IC=0 3 mA V Switching times ton Turn-on time toff Turn-off time IC=-10A ; IB1=-IB2=0.04A VCC=12V ; 2 1.0 µs 3.5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BDX67B