SavantIC Semiconductor Product Specification BUX84F BUX85F Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls systems PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolut maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage CONDITIONS BUX84F BUX85F BUX84F BUX85F Open emitter Open base Open collector VALUE 800 1000 400 450 UNIT V V 10 V IC Collector current 2 A ICM Collector current-peak 3 A IB Base current 0.75 A IBM Base current-peak 1 A Ptot Total power dissipation 18 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance junction to ambient MAX UNIT 55 K/W SavantIC Semiconductor Product Specification BUX84F BUX85F Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS BUX84F UNIT V 450 BUX85F IC=0.3A ;IB=0.03A VCEsat-2 Collector-emitter saturation voltage Base-emitter saturation voltage 0.8 V IC=1A ;IB=0.2A 1 V IC=1A ;IB=0.2A 1.1 V BUX84F VCES=800V; VBE=0 Tj=125 0.2 1.5 BUX85F VCES=1000V; VBE=0 Tj=125 0.2 1.5 1.0 Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=5V 20 hFE-2 DC current gain IC=0.5A ; VCE=5V 15 Transition frequency IC=0.2A ;VCE=10V;f=1.0MHz fT MAX IC=100mA ; IB=0;L=25mH Collector-emitter saturation voltage ICES TYP. 400 VCEsat-1 VBEsat MIN mA mA 100 20 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=1A ;VCC=250V IB1=0.2A;IB2=-0.4A 0.2 0.5 µs 2 3.5 µs 0.4 2 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUX84F BUX85F PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3