SAVANTIC BUX85F

SavantIC Semiconductor
Product Specification
BUX84F BUX85F
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor controls systems
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolut maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
BUX84F
BUX85F
BUX84F
BUX85F
Open emitter
Open base
Open collector
VALUE
800
1000
400
450
UNIT
V
V
10
V
IC
Collector current
2
A
ICM
Collector current-peak
3
A
IB
Base current
0.75
A
IBM
Base current-peak
1
A
Ptot
Total power dissipation
18
W
TC=25
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
Thermal resistance junction to ambient
MAX
UNIT
55
K/W
SavantIC Semiconductor
Product Specification
BUX84F BUX85F
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
Collector-emitter
sustaining voltage
CONDITIONS
BUX84F
UNIT
V
450
BUX85F
IC=0.3A ;IB=0.03A
VCEsat-2
Collector-emitter saturation voltage
Base-emitter saturation voltage
0.8
V
IC=1A ;IB=0.2A
1
V
IC=1A ;IB=0.2A
1.1
V
BUX84F
VCES=800V; VBE=0
Tj=125
0.2
1.5
BUX85F
VCES=1000V; VBE=0
Tj=125
0.2
1.5
1.0
Collector cut-off current
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
20
hFE-2
DC current gain
IC=0.5A ; VCE=5V
15
Transition frequency
IC=0.2A ;VCE=10V;f=1.0MHz
fT
MAX
IC=100mA ; IB=0;L=25mH
Collector-emitter saturation voltage
ICES
TYP.
400
VCEsat-1
VBEsat
MIN
mA
mA
100
20
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1A ;VCC=250V
IB1=0.2A;IB2=-0.4A
0.2
0.5
µs
2
3.5
µs
0.4
2
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUX84F BUX85F
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3