Inchange Semiconductor Product Specification BUX84 BUX85 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High switching speed APPLICATIONS ・Suitable for switching power supplies in TV sets PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolut maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS BUX84 VCBO Collector-base voltage 400 Open base BUX85 VEBO Emitter-base voltage V 1000 BUX84 Collector-emitter voltage UNIT 800 Open emitter BUX85 VCEO VALUE V 450 Open collector 10 V IC Collector current 2 A ICM Collector current-peak 3 A IB Base current 0.75 A IBM Base current-peak 1 A Ptot Total power dissipation 40 W TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 2.5 K/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to mounting flange Inchange Semiconductor Product Specification BUX84 BUX85 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUX84 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT 400 IC=100mA ; IB=0;L=25mH BUX85 V 450 VCEsat-1 Collector-emitter saturation voltage IC=0.3A ;IB=0.03A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=1A ;IB=0.2A 3.0 V Base-emitter saturation voltage IC=1A ;IB=0.2A 1.1 V BUX84 VCES=800V; VBE=0 Tj=125℃ 1.0 1.5 BUX85 VCES=1000V; VBE=0 Tj=125℃ 0.2 1.5 1.0 VBEsat ICES Collector cut-off current mA IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=5V 20 hFE-2 DC current gain IC=0.5A ; VCE=5V 15 Transition frequency IC=0.2A ;VCE=10V;f=1.0MHz fT mA 100 20 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=1A ;VCC=250V IB1=0.2A;IB2=-0.4A 0.2 0.5 μs 2 3.5 μs 0.4 2 μs Inchange Semiconductor Product Specification BUX84 BUX85 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3