ISC BUT56

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT56 BUT56A
・
DESCRIPTION
・With TO-220C package
・High voltage;high speed
・High power dissipation
APPLICATIONS
・Switching mode power supply
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
体
导
半
固电
Absolut maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
Collector-base voltage
800
Open emitter
BUT56A
M
E
S
GE
BUT56
VCEO
N
A
H
INC
Collector-emitter voltage
Open base
BUT56A
VEBO
Emitter-base voltage
Open collector
R
O
T
U
D
N
O
IC
BUT56
VCBO
VALUE
UNIT
V
1000
400
V
450
6
V
IC
Collector current
8
A
ICM
Collector current-peak
10
A
IBM
Base current-peak
4
A
Ptot
Total power dissipation
100
W
TC=25℃
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
MAX
UNIT
1.25
K/W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to mounting case
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT56 BUT56A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BUT56
V(BR)CEO
Collector-emitter
breakdown voltage
TYP.
MAX
UNIT
400
IC=100mA ;LC=125mH
BUT56A
V(BR)EBO
MIN
V
450
Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=4A ;IB=0.8A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=0.8A
2.0
V
BUT56
VCE=800V; VBE=0
Tj=150℃
1.0
2.0
BUT56A
VCE=1000V; VBE=0
Tj=150℃
1.0
2.0
ICES
hFE-1
hFE-2
fT
Collector
cut-off current
体
导
半
固电
DC current gain
6
mA
IC=1A ; VCE=5V
BUT56
IC=4A ; VCE=5V
BUT56A
IC=3A ; VCE=2V
15
Switching times
M
E
S
GE
N
A
H
INC
toff
Turn-off time
tf
Fall time
45
R
O
T
U
D
N
O
IC
DC current gain
Transition frequency
V
IC=0.5A ;VCE=10V;f=1.0MHz
5.5
4
10
MHz
4
μs
1
μs
IC=4A ;IB1=-IB2=1.25A
tp=20μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT56 BUT56A
PACKAGE OUTLINE
体
导
半
固电
R
O
T
U
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3