SAVANTIC BUS14

SavantIC Semiconductor
Product Specification
BUS14A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor controls
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
1000
V
VCEO
Collector-emitter voltage
Open base
450
V
VEBO
Emitter-base voltage
Open collector
9
V
IC
Collector current
30
A
ICM
Collector current-Peak
50
A
IB
Base current
6
A
IBM
Base current-Peak
10
A
PT
Total power dissipation
250
W
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
Tmb=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
Thermal resistance from junction to mounting base
VALUE
0.7
UNIT
/W
SavantIC Semiconductor
Product Specification
BUS14A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0; L=25mH
450
VCE(sat)
Collector-emitter saturation voltage
IC=16A; IB=3.2A
1.5
V
VBE(sat)
Base-emitter saturation voltage
IC=16A; IB=3.2A
1.7
V
ICES
Collector cut-off current
VCE=RatedBVCEO; VBE=0
TC=125
1
5
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
10
mA
hFE
DC current gain
IC=2A ; VCE=5V
15
TYP.
MAX
UNIT
V
50
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=16A; IB1=- IB2=3.2A
2
1.0
µs
4.0
µs
0.8
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BUS14A