2SB1132 PNP Silicon Medium Power Transistor Elektronische Bauelemente SOT-89 D Dimensions In Millimeters D1 1.BASE Symbol A 2.COLLECTOR E E1 3.EMITTER b1 b Max Min Max A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.400 1.800 0.055 0.071 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 1.500TYP e C e L *Features e1 Dimensions In Inches Min 0.167 0.060TYP e1 2.900 3.100 0.114 0.122 L 0.900 1.100 0.035 0.043 Low power dissipation 0.5W RoHS Compliant Product *Stucture Epitaxial planar type. PNP silicon transistor. ELECTRICAL CHARACTERISTICS Tamb=25 Symbol Parameter unless otherwise specified Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-50 A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-50 A,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -0.5 A Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 A DC current gain hFE(1) VCE=-3V,IC=-100mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance 82 390 IC=-500mA,IB=-50mA VCE=-5V,IC=-50mA,f=30MHz VCB=-10V,IE=0,f=1MHz -0.5 150 V MHz 20 30 pF CLASSIFICATION OF hFE(1) Rank Range http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A P Q R 82-180 120-270 180-390 Any changing of specification will not be informed individual Page 1 of 3 2SB1132 Elektronische Bauelemente PNP Silicon Medium Power Transistor Electrical Characteristic Curves http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2SB1132 Elektronische Bauelemente PNP silicon Medium Power Transistor Electrical Characteristic Curves http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 3