BCP772 PNP Epitaxial Planar Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-89 Description The BCP772 is designed for using in output stage of amplifier, voltage regulator, DC-DC converter and relay driver. REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. o Absolute Maximum Ratings at TA=25 C (unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VE BO - 5. V Collect Current IC -3 A Total Power Dissipation (TC=25 oC ) PD 1.2 Operating Junction and Storage Temperature Range Tj, Tstg W C o -55~+150 o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Symbol BVCBO BVCEO BVEBO I CBO Min -40 -30 -5 - Typ. - Emitter-Base Cutoff Current I EBO - - Collector Saturation Voltage VCE(sat) VBE(sat) - -0.3 Base Satruation Voltage h FE1 30 - - 100 - 160 80 500 - 55 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance h FE2 fT Cob -1 Max - Unit V V V Test Conditions I C=-100µA I C=-1mA -1 uA I E=-10µA VCB=-30V -1 uA VBE=-3 V -0.5 -2 V I C=- 2 A,IB=-0.2A V I C=- 2A,IB=- 0.2A - VCE=-2 V, I C=- 20mA VCE=-2 V, I C=- 1 A MH z pF VCE=-5V, IC=- 20mA,f=100MHz VCB=-10 V , f=1MHz Classification of hFE2 Rank Range http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Q 100~200 P 160~320 E 250~500 Any changing of specification will not be informed individual Page 1 of 2 BCP772 Elektronische Bauelemente PNP Epitaxial Planar General Purpose Transistor Characteristics Curve http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2