SMG3400 5.8A, 30V,RDS(ON) 28mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product SC-59 A Description L * The SMG3400 uses advanced trench technology to provide excellent on-resistance extremely efficient and S 2 3 Top View B 1 cost-effectiveness device. * The SMG3400 is universally used for all D commercial-industrial applications. G J C Features K H Drain * Lower Gate Charge * Small Package Outline Gate D Source * RoHS Compliant Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Unit V V A A A W W/ Tj, Tstg Ratings 30 ±12 5.8 4.9 30 1.38 0.01 -55 ~ +150 Symbol Rthj-a Value 90 Unit /W Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 4 SMG3400 5.8A, 30V,RDS(ON) 28mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.7 - 1.4 V VDS=VGS, ID=250uA gfs - 15 - S VDS=5V, ID=5A IGSS - - ±100 nA VGS= ±12V - - 1 uA VDS=24V, VGS=0 - - 5 uA VDS=24V, VGS=0 - - 28 - - 33 - - 52 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) Static Drain-Source On-Resistance IDSS RDS(ON) Test Conditions VGS=10V, ID=5.8A m VGS=4.5V, ID=5.0A VGS=2.5V, ID=4.0A Total Gate Charge2 Qg - 9.7 12 Gate-Source Charge Qgs - 1.6 - Gate-Drain (“Miller”) Change Qgd - 3.1 - Td(on) - 3.3 - Tr - 4.8 - Td(off) - 26.3 - Tf - 4.1 - Input Capacitance Ciss - 823 1030 Output Capacitance Coss - 99 - Reverse Transfer Capacitance Crss - 77 - Rg - 1.2 3.6 Symbol Min. Typ. Max. Unit VSD - - 1.0 V IS=1.0A, VGS=0V Reverse Recovery Time Trr - 16 - ns Reverse Recovery Charge Qrr - 8.9 - nC IS=5A, VGS=0V dI/dt=100A/ s Continuous Source Current (Body Diode) IS - - 2.5 A Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Gate Resistance nC ID=5.8A VDS=15V VGS=4.5V ns VDS=15V VGS=10V RG=3 RL=2.7 pF VGS=0V VDS=15V f=1.0MHz f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage 2 Test Conditions VD=VG=0V, VS=1.0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 SMG3400 Elektronische Bauelemente 5.8A, 30V,RDS(ON) 28mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 3. On-Resistance v.s. Gate Voltage 10 1 0.1 0.01 0.001 0.0001 0.00001 0.000001 Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 SMG3400 Elektronische Bauelemente Fig 7. Gate Charge Characteristics Fig 9. Transfer Characteristics 5.8A, 30V,RDS(ON) 28mΩ N-Channel Enhancement Mode Power Mos.FET Fig 8. Typical Capacitance Characteristics Fig 10. Single Pulse Power Fig 11. Normalized Thermal Transient Impedance, Junction to Ambient http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 4 of 4