SMG3407 -4.1A, -30V,RDS(ON) 52mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A Description SC-59 L The SMG 3407 uses advanced trench technology to provide excellent on-resistance with low gate change. S 2 3 Top View B 1 The device is suitable for use as a load switch or in PWM applications. D G Features * Lower Gate Charge * Small Package Outline J C K H Drain * RoHS Compliant Gate Source D Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Unit V V A A A W W/ Tj, Tstg Ratings -30 ±20 -4.1 -3.5 -20 1.38 0.01 -55 ~ +150 Symbol Rthj-a Ratings 90 Unit /W Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 4 SMG3407 -4.1A, -30V,RDS(ON) 52mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250uA Gate Threshold Voltage VGS(th) -1.0 - -3.0 V VDS=VGS, ID=-250uA gfs - 8.2 - S VDS=-5V, ID=-4A IGSS - - ±100 nA VGS= ±20V - - -1 uA VDS=-30V, VGS=0 - - -5 uA VDS=-24V, VGS=0 - - 52 - - 87 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) Static Drain-Source On-Resistance IDSS RDS(ON) m Test Conditions VGS=-10V, ID=-4.1A VGS=-4.5V, ID=-3.0A Total Gate Charge2 Qg - 7 - Gate-Source Charge Qgs - 3.1 - Gate-Drain (“Miller”) Change Qgd - 3 - Td(on) - 8.6 - Tr - 5 - Td(off) - 28.2 - Tf - 13.5 - Input Capacitance Ciss - 700 840 Output Capacitance Coss - 120 - Reverse Transfer Capacitance Crss - 75 - Rg - 10 - Symbol Min. Typ. Max. Unit VSD - - -1.0 V IS=-1.0A, VGS=0V Reverse Recovery Time Trr - 27 - ns Reverse Recovery Charge Qrr - 15 - nC IS=-4A, VGS=0V dI/dt=100A/ s Continuous Source Current (Body Diode) IS - - -2.2 A Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Gate Resistance nC ID=-4A VDS=-15V VGS=-4.5V ns VDS=-15V VGS=-10V RG=3 RL=3.6 pF VGS=0V VDS=-15V f=1.0MHz f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage 2 Test Conditions VD=VG=0V, VS=-1.0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board; 270 /W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 SMG3407 -4.1A, -30V,RDS(ON) 52mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 1 0.1 0.01 0.001 0.0001 0.00001 0.000001 Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 SMG3407 -4.1A, -30V,RDS(ON) 52mΩ Elektronische Bauelemente Fig 7. Maximum Safe Operating Area Fig 9. Gate Charge Characteristics P-Channel Enhancement Mode Power Mos.FET Fig 8. Single Pulse Power Rating Junction-to-Ambient v.s. Junction Temperature Fig 10. Typical Capacitance Characteristics Fig 11. Normalized Maximum Transient Thermal Impedance http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 4 of 4