SMG351AN 3A, 30V,RDS(ON) 60mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A L SC-59 Description The SMG351AN uses advanced trench technology to provide excellent on-resistance with low gate change. S 2 The device is suitable for use as a load switch or in PWM applications. 3 Top View B 1 D G J C Features K H * Lower Gate Charge * Small Package Outline Drain Gate Source D Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Symbol VDS VGS ID @TA=25 IDM PD @TA=25 Unit V V A A W W/ Tj, Tstg Ratings 30 ±20 3 10 1.38 0.01 -55 ~ +150 Symbol Rthj-a Value 90 Unit /W Any changing of specification will not be informed individual Page 1 of 4 SMG351AN 3A, 30V,RDS(ON) 60mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.1 - Gate Threshold Voltage VGS(th) 1.0 - 2.5 V VDS=VGS, ID=250uA gfs - 13 - S VDS=5V, ID=3.0A IGSS - - ±100 nA VGS= ±20V - - 1 uA VDS=30V, VGS=0 - - 10 uA VDS=24V, VGS=0 - - 60 - - 100 Qg - 8.5 - Gate-Source Charge Qgs - 1.5 - Gate-Drain (“Miller”) Change Qgd - 3.2 - Td(on) - 6 - Tr - 20 - Td(off) - 20 - Tf - 3 - Input Capacitance Ciss - 660 - Output Capacitance Coss - 90 - Reverse Transfer Capacitance Crss - 70 - Rg - 0.9 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=1.2A, VGS=0V Reverse Recovery Time Trr - 14 - ns Reverse Recovery Charge Qrr - 7 - nC IS=3A, VGS=0V dI/dt=100A/ s Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) Static Drain-Source On-Resistance 2 Total Gate Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Gate Resistance IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=10V, ID=3.0A VGS=4.5V, ID=2.0A nC ID=3A VDS=16V VGS=4.5V ns VDS=15V ID=3A VGS=10V RG=3.3 RD=3 pF VGS=0V VDS=25V f=1.0MHz VGS=15mV, f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage 2 Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 SMG351AN 3A, 30V,RDS(ON) 60mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Characteristics Curve 5 VGS=10V 5 4.5V VDS=5V 6.0V 4 ID Drain Current (A) ID Drain Current (A) 4 3 3.5V 2 1 3 2 TA=125 25 1 3.0V -55 0 0 0 0.5 1 1..5 2 2 2.5 VDS Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 3 3..5 4 VGS Gate-to-Source Voltage (V) Fig 2. Typical Output Characteristics 0.215 ID=3A 3A 0.200 RDS(ON) ( ) 0.175 0.150 TA=125 0.125 0.100 0.075 TA=25 0.050 3 4 5 6 7 8 9 10 VGS Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 SMG351AN 3A, 30V,RDS(ON) 60mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET 3A Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Page 4 of 4