2N7000
SemiWell Semiconductor
Logic N-Channel MOSFET
Features
■
Symbol
RDS(on) (Max 5 Ω )@VGS=10V
{
RDS(on) (Max 5.3Ω )@VGS=4.5V
■
■
3. Drain
●
Gate Charge (Typical 0.5nC)
Maximum Junction Temperature Range (150°C)
◀
2. Gate
{
▲
●
●
{
General Description
1. Source
TO-92
This Power MOSFET is produced using planar DMOS technology.
And this Power MOSFET is well suited for Battery switch, Load
switch, Motor controller and other small signal switches.
1
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Value
Units
Drain to Source Voltage
60
V
Continuous Drain Current(@TA = 25°C)
200
mA
500
mA
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
±20
V
Total Power Dissipation Single Operation (TA=25°C)
0.4
W
Total Power Dissipation Single Operation (TA=70°C)
3.2
mW
- 55 ~ 150
°C
300
°C
PD
TSTG, TJ
TL
(Note 1)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 10 seconds.
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient
Value
Min.
Typ.
Max.
-
-
312.5
January, 2003. Rev. 0.
Units
°C/W
1/6
Copyr ight@SemiWell Semiconductor Co., Ltd., All rights reserved.
2N7000
Electrical Characteristics
Symbol
( TJ = 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
60
-
-
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
Δ BVDSS/
Δ TJ
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25 °C
-
48
-
mV/°C
IDSS
Drain-Source Leakage Current
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125 °C
-
-
1
1000
uA
Gate-Source Leakage, Forward
VGS = 20V, VDS = 0V
100
nA
Gate-Source Leakage, Reverse
VGS = -20V, VDS = 0V
-
-
-100
nA
IGSS
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
1.0
-
2.5
V
RDS(ON)
Static Drain-Source On-state
Resistance
VGS = 10 V, ID = 500mA
VGS = 4.5 V, ID = 75mA
-
1.55
1.9
5
5.3
Ω
Dynamic Characteristics
Ciss
Input Capacitance
-
20
25
Coss
Output Capacitance
-
11
14
Crss
Reverse Transfer Capacitance
-
3
4
-
4
18
-
2.5
15
-
17
44
VGS =0 V, VDS =25V, f = 1MHz
pF
Dynamic Characteristics
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
VDD =30V, ID =200mA, RG =50Ω
VGS = 10 V
(Note 2,3)
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge(Miller Charge)
VDS =30V, VGS =4.5V, ID =200mA
(Note 2,3)
ns
-
7
24
-
0.5
0.65
-
0.15
-
-
0.2
-
Min.
Typ.
Max.
Unit.
-
-
200
mA
-
-
1.2
V
nC
Source-Drain Diode Ratings and Characteristics
Symbol
IS
VSD
Parameter
Test Conditions
Maximum Continuous Diode Forward Current
Diode Forward Voltage
IS =200mA, VGS =0V
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
3. Essentially independent of operating temperature.
2/6
(Note 2)
2N7000
Fig 2. Transfer Characteristics
Fig 1. On-State Characteristics
VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
0
10
0
10
ID, Drain Current [A]
ID, Drain Current [A]
Top :
o
150 C
o
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
-55 C
o
25 C
※ Notes :
1. VDS = 10V
2. 250µ s Pulse Test
-1
0
10
1
10
0
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
2.5
IDR, Reverse Drain Current [A]
RDS(ON),
Drain-Source On-Resistance [mΩ ]
3.0
VGS = 4.5V
VGS = 10V
2.0
1.5
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : TJ = 25℃
1.0
0.0
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10
0.2
0.4
ID, Drain Current [A]
0.8
1.0
1.2
1.4
Fig 6. Gate Charge Characteristics
Fig 5. Capacitance Characteristics
50
12
VGS, Gate-Source Voltage [V]
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
40
Capacitance [pF]
0.6
VSD, Source-Drain voltage [V]
※ Notes :
1. VGS = 0V
2. f=1MHz
30
Ciss
20
Coss
10
Crss
10
VDS = 30V
8
VDS = 48V
6
4
2
※ Note : ID = 200 mA
0
0
5
10
15
20
VDS, Drain-Source Voltage [V]
25
30
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
QG, Total Gate Charge [nC]
3/6
2N7000
Fig 8. On-Resistance Variation
vs. Junction Temperature
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µ A
0.9
0.8
-100
-50
0
50
100
o
TJ, Junction Temperature [ C]
4/6
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
150
200
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 500 mA
-50
0
50
100
o
TJ, Junction Temperature [ C]
150
200
2N7000
Fig. 9. Gate Charge Test Circuit & Waveforms
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
V
4.5V
300nF
VDS
VGS
Qgs
Qgd
DUT
1mA
Charge
Fig 10. Switching Time Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
( 0.5 rated V DS )
10V
V
Pulse
Generator
RG
DUT
Vin
10%
tr
td(on)
t on
td(off)
tf
t off
5/6
2N7000
TO-92 Package Dimension
Dim.
mm
Min.
Inch
Typ.
A
Max.
Min.
4.2
Typ.
0.165
B
3.7
0.146
C
4.43
4.83
0.174
0.190
D
14.07
14.87
0.554
0.585
E
F
0.4
4.43
4.83
G
0.016
0.174
0.190
0.45
0.017
H
2.54
0.100
I
2.54
0.100
J
0.33
0.48
0.013
0.019
A
E
B
F
C
G
1
D
2
3
H
6/6
Max.
I
1. Source
2. Gate
3. Drain
J