SSM6923O
P-CHANNEL POWER MOSFET WITH SCHOTTKY DIODE
P-channel MOSFET
Low on-resistance
Fast switching characteristics
A
R DS(ON) @ 4.5V 50mΩ
K
Surface-mount package
S
TSSOP-8
-20V
BVDSS
A
A
G
-3.5A
ID
S
D
Schottky Diode
VKA
Description
20V
Vf @ 0.5V
1A
IF
1.5A
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
A
S
K
G
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage (MOSFET and Schottky)
-20
V
VKA
Reverse Voltage (Schottky)
20
V
VGS
Gate-Source Voltage (MOSFET)
Continuous Drain Current3 (MOSFET)
ID @ TA=25°C
± 12
V
A
A
ID @ TA=70°C
Continuous Drain Current (MOSFET)
- 3.5
- 2.8
IDM
Pulsed Drain Current1,2 (MOSFET)
- 30
A
IF
IFM
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
1
25
A
A
PD @ TA=25°C
Total Power Dissipation (MOSFET)
1
W
3
W/°C
Linear Derating Factor (MOSFET)
Total Power Dissipation (Schottky)
Linear Derating Factor (Schottky)
1
W
W/ °C
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 125
°C
Thermal Data
Symbol
Rthj-a
Rev.2.02 1/29/2004
Parameter
Thermal Resistance Junction-ambient (MOSFET) Max.
Thermal Resistance Junction-ambient (Schottky) Max.
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Value
125
Unit
°C/W
125
°C/W
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SSM6923O
Electrical Characteristics @ T j= 25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-20
-
-
V
-
0.03
-
V/°C
VGS=-4.5V, ID=-3.5A
-
-
50
mΩ
VGS=-2.5V, ID=-2.7A
-
-
85
mΩ
VDS=VGS, ID=-250uA
-0.5
-
-
V
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VGS=0V, ID=-250uA
2
VDS=-10V, ID=-3.5A
-
10
-
S
o
VDS=-20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-16V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 12V
-
-
±100
nA
ID= -3.5A
-
15.6
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS= -10V
-
2.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS= -4.5V
-
5.2
-
nC
VDS= -10V
-
8.2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID= -1A
-
9.4
-
ns
td(off)
Turn-off Delay Time
RG= 3.3Ω ,VGS= -4.5V
-
66.4
-
ns
tf
Fall Time
RD= 10Ω
-
48
-
ns
Ciss
Input Capacitance
VGS=0V
-
660
-
pF
Coss
Output Capacitance
VDS=-20V
-
285
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Min.
Typ.
VD=VG=0V , VS=-1.2V
-
-
-0.83
A
IS=-0.83A, VGS=0V
-
-
-1.2
V
Min.
Typ.
Source-Drain Diode
Symbol
IS
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
VSD
Test Conditions
Max. Units
Schottky Characteristics @ Tj=25°C
Symbol
Parameter
Test Conditions
Max. Units
VF
Forward Voltage Drop
IF=1A
-
-
0.5
V
Irm
Maximum Reverse Leakage Current
Vr=20V
-
-
100
uA
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208°C/W when mounted on Min. copper pad.
Rev.2.02 1/29/2004
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2 of 5
SSM6923O
MOSFET
24
32
o
-4.5V
-4.0V
-3.5V
T C =25 C
18
-ID , Drain Current (A)
24
-ID , Drain Current (A)
-4.5V
-4.0V
-3.5V
-3.0V
T C =150 o C
-3.0V
16
-2.5V
8
12
-2.5V
6
V GS = - 2.0V
V GS =-2.0V
0
0
0
1
2
3
4
0
1
Fig 1. Typical Output Characteristics
4
1.6
I D = -3.5A
I D =-3.5A
V GS =-4.5V
T C =25 o C
1.3
Normalized RDS(ON)
140
RDS(ON) (mΩ )
3
Fig 2. Typical Output Characteristics
180
100
1.0
0.7
60
0.4
20
1
2
3
4
5
-50
6
0
50
100
150
T j , Junction Temperature ( o C)
-V GS (V)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.2
10
0.9
-IS (A)
T j =150 o C
-VGS(th) (V)
1
T j =25 o C
0.1
0.6
0.01
0.3
0
0.4
0.8
1.2
-50
0
50
100
150
Junction Temperature ( o C )
-V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
Rev.2.02 1/29/2004
2
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM6923O
f=1.0MHz
10000
15
12
1000
V DS =-10V
V DS =-15V
V DS =-20V
9
Ciss
C (pF)
-VGS , Gate to Source Voltage (V)
I D =-3.5A
Coss
6
Crss
100
3
10
0
0
4
8
12
16
1
20
5
9
13
17
21
25
-V DS (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty Factor=0.5
100us
10
-ID (A)
1ms
10ms
1
100ms
1s
0.1
DC
T C =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=208 oC/W
0.01
0.1
1
10
100
0.001
0.0001
-V DS (V)
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Rev.2.02 1/29/2004
Fig 10. Effective Transient Thermal Impedance
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SSM6923O
SCHOTTKY DIODE
10
I F - Forward Current (A)
Irm- Reverse Leakage Current (uA)
10000
1000
V KA = 20V
V KA =10V
100
T j = 1 25 o C
1
T j = 25oC
0.1
10
0.01
1
0
25
50
75
100
Junction Temperature (°C)
Fig 1. Reverse Leakage Current
vs. Junction Temperature
125
0.2
0.4
0.6
0.8
V F - Forward Voltage Drop (V)
Fig 2. Forward Voltage Drop
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.02 1/29/2004
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