TSML3710 VISHAY Vishay Semiconductors GaAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC2 SMD package. Features • • • • • SMT IRED with extra high radiant power Low forward voltage Compatible with automatic placement equipment EIA and ICE standard package Suitable for infrared, vapor phase and wavesolder process • Packed in 8 mm tape • • • • 94 8553 Applications Suitable for pulse current operation Extra wide angle of half intensity ϕ = ± 60° Peak wavelength λp = 950 nm Matched with TEMT3700 phototransistor IR emitter in photointerrupters, transmissive sensors and reflective sensors Household appliance IR emitter in low space applications Tactile keyboards Parts Table Part TSML3710 Ordering code TSML3710-GS08 Remarks MOQ 7500pcs (1500 pcs per reel) Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Reverse Voltage Parameter Test condition VR 5 Unit V Forward Current IF 100 mA mA Peak Forward Current tp/T = 0.5, tp = 100 µs IFM 200 Surge Forward Current tp = 100 µs IFSM 1 A PV 170 mW Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Document Number 81075 Rev. 3, 06-Jun-03 t ≤10sec Tj 100 °C Tamb - 40 to + 85 °C Tstg - 40 to +100 °C Tsd 260 °C RthJA 450 K/W www.vishay.com 1 TSML3710 VISHAY Vishay Semiconductors Basic Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward Voltage Typ. Max Unit IF = 100 mA, tp = 20 ms Test condition Symbol VF 1.35 1.7 V IF = 1 A, tp = 100 µs VF 2.6 3.2 V -1.85 Temp. Coefficient of VF IF = 1 mA TKVF Reverse Current VR = 5 V IR Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 Cj Radiant Intensity IF = 100 mA, tp = 20 ms Ie IF = 1 A, tp = 100 µs Ie Min mV/K µA 100 4 25 pF 8 mW/sr 60 mW/sr Radiant Power IF = 100 mA, tp = 20 ms φe 35 mW Temp. Coefficient of φe IF = 100 mA TKφe -0.6 %/K ϕ ±60 deg Peak Wavelength IF = 100 mA λp 950 nm Spectral Bandwidth IF = 100 mA ∆λ 50 nm Temp. Coefficient of λp IF = 100 mA TKλp 0.2 nm/K Rise Time IF = 20 mA tr 800 ns IF = 1 A tr 500 ns IF = 20 mA tf 800 ns IF = 1 A tf 500 ns Angle of Half Intensity Fall Time Typical Characteristics (Tamb = 25 °C unless otherwise specified) 125 200 150 RthJA 100 50 I F - Forward Current ( mA ) PV –Power Dissipation (mW) 250 0 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.com 2 RthJA 75 50 25 0 0 16846 100 0 16847 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature Document Number 81075 Rev. 3, 06-Jun-03 TSML3710 VISHAY Vishay Semiconductors I F - Forward Current ( mA ) 0.1 0.05 1000 0.02 tp / T = 0.01 0.2 0.5 100 1.0 10 0.01 0.10 1.00 10.00 10 1 0.1 10 0 100.00 t p - Pulse Duration ( ms ) 14335 I e - Radiant Intensity ( mW/sr ) 100 10000 15903 10 4 Figure 6. Radiant Intensity vs. Forward Current Figure 3. Pulse Forward Current vs. Pulse Duration 10 4 Radiant Power ( mW ) 1000 10 3 10 2 t p = 100 µ s tp / T = 0.001 100 10 Φe - I F - Forward Current ( mA ) 10 1 10 2 10 3 I F - Forward Current ( mA ) 10 1 10 0 0 1 2 3 0.1 10 0 4 V F - Forward Voltage ( V ) 13600 1 94 8740 10 1 10 2 10 3 I F - Forward Current ( mA ) 10 4 Figure 7. Radiant Power vs. Forward Current Figure 4. Forward Current vs. Forward Voltage 1.2 1.6 IF = 1 mA 1.2 I c rel / F c rel Forward Voltage ( V ) 1.4 1.1 1.0 0.9 IF = 20 mA 1.0 0.8 0.6 0.4 0.8 0.2 0.7 0 16848 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) Figure 5. Forward Voltage vs. Ambient Temperature Document Number 81075 Rev. 3, 06-Jun-03 0.0 –10 0 10 20 30 40 50 60 70 80 90 100 16849 Tamb – Ambient Temperature ( °C ) Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature www.vishay.com 3 TSML3710 VISHAY Vishay Semiconductors Φˇ e rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 I F = 100 mA 0 900 1000 950 λ - Wavelength ( nm ) 94 7994 e Figure 9. Relative Radiant Power vs. Wavelength I e rel - Relative Radiant Intensity 0° 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8013 Figure 10. Relative Radiant Intensity vs. Angular Displacement www.vishay.com 4 Document Number 81075 Rev. 3, 06-Jun-03 TSML3710 VISHAY Vishay Semiconductors Package Dimensions in mm 95 11314 Pad Layout 95 10966 Document Number 81075 Rev. 3, 06-Jun-03 www.vishay.com 5 TSML3710 VISHAY Vishay Semiconductors Temperature - Time Profile Adhesive Tape 94 8625 300 max. 240 °C ca. 230 ° C 10 s Temperature ( °C ) 250 Blister Tape 200 215 ° C 150 max 40 s max. 160 °C 100 90 s - 120 s Lead Temperature 50 2 K/s - 4 K/s 0 0 50 Component Cavity full line : typical dotted line : process limits 100 150 Time ( s ) 200 94 8670 Figure 12. Blister Tape 250 Figure 11. Infrared Reflow Soldering Optodevices (SMD Package) Drypack 3.5 3.1 2.2 2.0 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 5.75 5.25 3.6 3.4 4.0 3.6 8.3 7.7 Floor Life Floor life (time between soldering and removing from MBB) must not exceed the time indicated in J-STD-020. TSML 3710 is released for: Moisture Sensitivity Level 2, according to JEDEC, J-STD-020 Floor Life: 1 year Conditions: Tamb < 30°C, RH < 60% 1.85 1.65 1.6 1.4 4.1 3.9 2.05 1.95 4.1 3.9 0.25 94 8668 Figure 13. Tape Dimensions in mm for PLCC-2 Drying In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or Label. Devices taped on reel dry using recommended conditions 192 h @ 40°C (+ 5°C), RH < 5% www.vishay.com 6 Document Number 81075 Rev. 3, 06-Jun-03 TSML3710 VISHAY Vishay Semiconductors Missing Devices Cover Tape Removal Force A maximum of 0.5% of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the bliesters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. De-reeling direction 94 8158 > 160 mm Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Figure 14. Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartements. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least comoponent is followed by a carrier tape trailer with a least 75 empty compartements and sealed with cover tape. 10.0 9.0 120 ° 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 Identification Label: Tfk Type Group Tape Code Production Code Quantity 180 178 14.4 max. 94 8665 Figure 15. Dimensions of Reel Document Number 81075 Rev. 3, 06-Jun-03 www.vishay.com 7 TSML3710 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 Document Number 81075 Rev. 3, 06-Jun-03