VISHAY TSML3710

TSML3710
VISHAY
Vishay Semiconductors
GaAs/GaAlAs Infrared Emitting Diode in SMT Package
Description
TSML3710 is an infrared emitting diode in GaAlAs on
GaAs technology in miniature PLCC2 SMD package.
Features
•
•
•
•
•
SMT IRED with extra high radiant power
Low forward voltage
Compatible with automatic placement equipment
EIA and ICE standard package
Suitable for infrared, vapor phase and wavesolder
process
• Packed in 8 mm tape
•
•
•
•
94 8553
Applications
Suitable for pulse current operation
Extra wide angle of half intensity ϕ = ± 60°
Peak wavelength λp = 950 nm
Matched with TEMT3700 phototransistor
IR emitter in photointerrupters, transmissive sensors
and reflective sensors
Household appliance
IR emitter in low space applications
Tactile keyboards
Parts Table
Part
TSML3710
Ordering code
TSML3710-GS08
Remarks
MOQ 7500pcs (1500 pcs per reel)
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Reverse Voltage
Parameter
Test condition
VR
5
Unit
V
Forward Current
IF
100
mA
mA
Peak Forward Current
tp/T = 0.5, tp = 100 µs
IFM
200
Surge Forward Current
tp = 100 µs
IFSM
1
A
PV
170
mW
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Document Number 81075
Rev. 3, 06-Jun-03
t ≤10sec
Tj
100
°C
Tamb
- 40 to + 85
°C
Tstg
- 40 to +100
°C
Tsd
260
°C
RthJA
450
K/W
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TSML3710
VISHAY
Vishay Semiconductors
Basic Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward Voltage
Typ.
Max
Unit
IF = 100 mA, tp = 20 ms
Test condition
Symbol
VF
1.35
1.7
V
IF = 1 A, tp = 100 µs
VF
2.6
3.2
V
-1.85
Temp. Coefficient of VF
IF = 1 mA
TKVF
Reverse Current
VR = 5 V
IR
Junction Capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
Radiant Intensity
IF = 100 mA, tp = 20 ms
Ie
IF = 1 A, tp = 100 µs
Ie
Min
mV/K
µA
100
4
25
pF
8
mW/sr
60
mW/sr
Radiant Power
IF = 100 mA, tp = 20 ms
φe
35
mW
Temp. Coefficient of φe
IF = 100 mA
TKφe
-0.6
%/K
ϕ
±60
deg
Peak Wavelength
IF = 100 mA
λp
950
nm
Spectral Bandwidth
IF = 100 mA
∆λ
50
nm
Temp. Coefficient of λp
IF = 100 mA
TKλp
0.2
nm/K
Rise Time
IF = 20 mA
tr
800
ns
IF = 1 A
tr
500
ns
IF = 20 mA
tf
800
ns
IF = 1 A
tf
500
ns
Angle of Half Intensity
Fall Time
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
125
200
150
RthJA
100
50
I F - Forward Current ( mA )
PV –Power Dissipation (mW)
250
0
10 20 30 40 50 60 70 80 90 100
Tamb – Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
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2
RthJA
75
50
25
0
0
16846
100
0
16847
10 20 30 40 50 60 70 80 90 100
Tamb – Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
Document Number 81075
Rev. 3, 06-Jun-03
TSML3710
VISHAY
Vishay Semiconductors
I F - Forward Current ( mA )
0.1
0.05
1000
0.02
tp / T = 0.01
0.2
0.5
100
1.0
10
0.01
0.10
1.00
10.00
10
1
0.1
10 0
100.00
t p - Pulse Duration ( ms )
14335
I e - Radiant Intensity ( mW/sr )
100
10000
15903
10 4
Figure 6. Radiant Intensity vs. Forward Current
Figure 3. Pulse Forward Current vs. Pulse Duration
10 4
Radiant Power ( mW )
1000
10 3
10 2
t p = 100 µ s
tp / T = 0.001
100
10
Φe -
I F - Forward Current ( mA )
10 1
10 2
10 3
I F - Forward Current ( mA )
10 1
10 0
0
1
2
3
0.1
10 0
4
V F - Forward Voltage ( V )
13600
1
94 8740
10 1
10 2
10 3
I F - Forward Current ( mA )
10 4
Figure 7. Radiant Power vs. Forward Current
Figure 4. Forward Current vs. Forward Voltage
1.2
1.6
IF = 1 mA
1.2
I c rel / F c rel
Forward Voltage ( V )
1.4
1.1
1.0
0.9
IF = 20 mA
1.0
0.8
0.6
0.4
0.8
0.2
0.7
0
16848
10 20 30 40 50 60 70 80 90 100
Tamb – Ambient Temperature ( °C )
Figure 5. Forward Voltage vs. Ambient Temperature
Document Number 81075
Rev. 3, 06-Jun-03
0.0
–10 0 10 20 30 40 50 60 70 80 90 100
16849
Tamb – Ambient Temperature ( °C )
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
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TSML3710
VISHAY
Vishay Semiconductors
Φˇ e rel - Relative Radiant Power
1.25
1.0
0.75
0.5
0.25
I F = 100 mA
0
900
1000
950
λ - Wavelength ( nm )
94 7994 e
Figure 9. Relative Radiant Power vs. Wavelength
I e rel - Relative Radiant Intensity
0°
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
94 8013
Figure 10. Relative Radiant Intensity vs. Angular Displacement
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Document Number 81075
Rev. 3, 06-Jun-03
TSML3710
VISHAY
Vishay Semiconductors
Package Dimensions in mm
95 11314
Pad Layout
95 10966
Document Number 81075
Rev. 3, 06-Jun-03
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5
TSML3710
VISHAY
Vishay Semiconductors
Temperature - Time Profile
Adhesive Tape
94 8625
300
max. 240 °C
ca. 230 ° C
10 s
Temperature ( °C )
250
Blister Tape
200
215 ° C
150
max 40 s
max. 160 °C
100
90 s - 120 s
Lead Temperature
50
2 K/s - 4 K/s
0
0
50
Component Cavity
full line
: typical
dotted line : process limits
100
150
Time ( s )
200
94 8670
Figure 12. Blister Tape
250
Figure 11. Infrared Reflow Soldering Optodevices (SMD Package)
Drypack
3.5
3.1
2.2
2.0
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
5.75
5.25
3.6
3.4
4.0
3.6
8.3
7.7
Floor Life
Floor life (time between soldering and removing from
MBB) must not exceed the time indicated in
J-STD-020.
TSML 3710 is released for:
Moisture Sensitivity Level 2, according to JEDEC,
J-STD-020
Floor Life: 1 year
Conditions: Tamb < 30°C, RH < 60%
1.85
1.65
1.6
1.4
4.1
3.9
2.05
1.95
4.1
3.9
0.25
94 8668
Figure 13. Tape Dimensions in mm for PLCC-2
Drying
In case of moisture absorption devices should be
baked before soldering. Conditions see J-STD-020 or
Label.
Devices taped on reel dry using recommended conditions 192 h @ 40°C (+ 5°C), RH < 5%
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Document Number 81075
Rev. 3, 06-Jun-03
TSML3710
VISHAY
Vishay Semiconductors
Missing Devices
Cover Tape Removal Force
A maximum of 0.5% of the total number of
components per reel may be missing, exclusively
missing components at the beginning and at the end
of the reel. A maximum of three consecutive
components may be missing, provided this gap is
followed by six consecutive components.
The removal force lies between 0.1 N and 1.0 N at a
removal speed of 5 mm/s.
In order to prevent components from popping out of
the bliesters, the cover tape must be pulled off at an
angle of 180° with regard to the feed direction.
De-reeling direction
94 8158
> 160 mm
Tape leader
40 empty
compartments
min. 75 empty
compartments
Carrier leader
Carrier trailer
Figure 14. Beginning and End of Reel
The tape leader is at least 160 mm and is followed by
a carrier tape leader with at least 40 empty
compartements. The tape leader may include the
carrier tape as long as the cover tape is not connected
to the carrier tape.
The least comoponent is followed by a carrier tape
trailer with a least 75 empty compartements and
sealed with cover tape.
10.0
9.0
120 °
4.5
3.5
2.5
1.5
13.00
12.75
63.5
60.5
Identification
Label:
Tfk
Type
Group
Tape Code
Production
Code
Quantity
180
178
14.4 max.
94 8665
Figure 15. Dimensions of Reel
Document Number 81075
Rev. 3, 06-Jun-03
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TSML3710
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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8
Document Number 81075
Rev. 3, 06-Jun-03