AOD608 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD608 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AOD608 is n-channel p-channel VDS (V) = 40V -40V -10A (V GS = -10V) ID = 10A (V GS=10V) RDS(ON) RDS(ON) < 39 mΩ (VGS=10V) < 51 m Ω (VGS = -10V) < 50 mΩ (VGS=4.5V) < 75 m Ω (VGS = -4.5V) Pb-free (meets ROHS & Sony 259 specifications). ESD rating: 3000V (HBM) TO-252-4L D-PAK D2 D1 D1/D2 Top View Drain Connected to Tab G1 G2 S1 n-channel S1 G1 S2 p-channel S2 G2 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 Max p-channel -40 Units V ±20 V 10 -10 10 -10 Pulsed Drain Current C ID IDM 30 -30 Avalanche Current C IAR 12 -15 A EAR 21 33 mJ 20 50 10 25 2 2.5 1.3 1.6 -55 to 175 -55 to 175 Continuous Drain G Current TC=25°C TC=100°C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C PD PDSM TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient B Steady-State Maximum Junction-to-Case A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient B Steady-State Maximum Junction-to-Case Alpha & Omega Semiconductor, Ltd. Symbol RθJA RθJC RθJA RθJC A W W °C Device n-ch n-ch n-ch Typ 19 50 4 Max 23 60 7.5 °C/W °C/W °C/W p-ch p-ch p-ch 19 50 2.5 23 60 3 °C/W °C/W °C/W AOD608 N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 40 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 30 RDS(ON) Static Drain-Source On-Resistance 1 VGS=10V, ID=10A VGS=4.5V, ID=4A gFS Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=10A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 2.2 3 39 45 42 VGS=0V, VDS=0V, f=1MHz µA mA V mΩ 1 V 3.5 A 13 0.75 mΩ 50 S 500 VGS=0V, VDS=30V, f=1MHz Units A 32 TJ=125°C VSD Max V VDS=32V, VGS=0V VGS(th) IS Typ pF 106 pF 38 pF 2.6 Ω 8.4 nC 4.1 nC 1.6 nC Gate Drain Charge 2.6 nC Turn-On DelayTime 4.8 ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=20V, ID=10A VGS=10V, VDS=20V, RL=2Ω, RGEN=3Ω 2 ns 17 ns 2.1 ns IF=10A, dI/dt=100A/µs 17.5 Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 11.1 ns nC Body Diode Reverse Recovery Time A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0: Aug 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD608 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 10V 20 5V 25 VDS=5V 4.5V 15 4V 15 ID(A) ID (A) 20 10 125°C 10 VGS=3.5V 5 5 0 0 1 2 3 4 25°C 0 5 2 2.5 VDS (Volts) Fig 1: On-Region Characteristics 4 4.5 1.8 Normalized On-Resistance VGS=4.5V RDS(ON) (mΩ) 3.5 VGS(Volts) Figure 2: Transfer Characteristics 50 40 30 VGS=10V 20 0 5 10 15 VGS=10V ID=10A 1.6 1.4 VGS=4.5V ID=4A 1.2 1 0.8 0.6 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 70 1.0E+01 ID=10A 1.0E+00 60 125°C 125°C 1.0E-01 50 IS (A) RDS(ON) (mΩ) 3 40 1.0E-02 25°C 1.0E-03 25°C 30 1.0E-04 1.0E-05 20 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOD608 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 800 10 700 Capacitance (pF) VGS (Volts) 8 VDS=30V ID=10A 6 4 2 Ciss 600 500 400 300 Coss 200 Crss 100 0 0 2 4 6 8 0 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 DC 10ms 1.0 0.1 1 VDS (Volts) 10 100 TJ(Max)=175°C TC=25°C 130 110 90 30 10 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=7.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 40 70 50 TJ(Max)=175°C TC=25°C 0.1 0.01 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 170 150 Power (W) ID (Amps) 1m RDS(ON) limited 10 210 190 10µs 10.0 5 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD608 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 25 TA=25°C 35 Power Dissipation (W) ID(A), Peak Avalanche Current 40 30 25 20 TA=150°C 15 10 tA = 5 0 0.000001 L⋅ ID BV − V DD 20 15 10 5 0 0.00001 0.0001 0 0.001 25 50 75 100 125 150 175 T CASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability current derating 50 40 10 Power (W) Current rating ID(A) 12 8 6 4 TJ(Max)=150°C TA=25°C 30 20 10 2 0 0 25 50 75 100 125 150 175 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) T CASE (°C) Figure 14: Current De-rating (Note B) ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 0.001 0.00001 PD Single Pulse 0.0001 Ton 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000 AOD608 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -40 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 RDS(ON) Static Drain-Source On-Resistance TJ=55°C VGS=-4.5V, ID=-4A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-10A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz Units -3 µA µA V A 51 59 62 75 mΩ -1 V 3.5 A 13 -0.75 mΩ S 1000 pF 152 pF 77 pF 11 Ω 17.4 nC 8.8 nC 3.3 nC Gate Drain Charge 4.5 nC Turn-On DelayTime 9.7 ns 6.3 ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr -1.9 42 TJ=125°C gFS -5 ±150 VGS=-10V, ID=-10A VSD Max V VDS=-32V, VGS=0V IDSS IS Typ VGS=-10V, VDS=-20V, ID=-10A VGS=-10V, VDS=-20V, RL=2Ω, RGEN=3Ω IF=-10A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs 35.5 ns 26 ns 22 ns nC 15.9 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0: Aug 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD608 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 25 30 -10V 25 VDS=-5V -5V -6V -4.5V 20 -4V 15 15 -ID(A) -ID (A) 20 10 -3.5V 10 5 0 1 2 3 25°C 5 VGS=-3V 0 125°C 4 0 5 1 1.5 -VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 5 5.5 Normalized On-Resistance 1.8 70 RDS(ON) (mΩ) 2.5 -VGS(Volts) Figure 2: Transfer Characteristics 80 VGS=-4.5V 60 50 40 VGS=-10V VGS=-10V ID=-10A 1.6 1.4 1.2 VGS=-4.5V ID=-4A 1 0.8 0.6 30 0 2 4 6 8 -50 10 -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 100 1.0E+00 ID=-10A 90 125°C 1.0E-01 125°C 80 -IS (A) RDS(ON) (mΩ) 2 70 60 25°C 1.0E-02 1.0E-03 1.0E-04 50 25°C 1.0E-05 40 2 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-06 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOD608 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 1400 10 Capacitance (pF) -VGS (Volts) 8 Ciss 1200 VDS=-40V ID=-10A 6 4 2 1000 800 600 400 Crss Coss 200 0 0 0 4 8 12 16 -Qg (nC) Figure 7: Gate-Charge Characteristics 100 0 20 5 10 15 20 25 30 35 -VDS (Volts) Figure 8: Capacitance Characteristics 200 TJ(Max)=150°C, TA=25°C 160 10 Power (W) ID (Amps) 10µs 100µs RDS(ON) limited 1ms 10ms 100m 1s 10s 1 DC 1 10 ZθJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 120 80 0 0.0001 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 TJ(Max)=175°C TA=25°C 40 0.1 0.1 40 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD608 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 60 tA = 55 45 L⋅ ID BV − VDD Power Dissipation (W) -ID(A), Peak Avalanche Current 65 TA=25°C 35 TA=150°C 25 15 50 40 30 20 10 0 5 0.000001 0.00001 0.0001 0 0.001 25 14 60 12 50 10 Power (W) Current ratingID(A) 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 8 6 4 TA=25°C 40 30 20 10 2 0 0 25 50 75 100 125 150 0 0.001 175 TCASE (°C) Figure 14: Current De-rating (Note B) 10 ZθJA Normalized Transient Thermal Resistance 50 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 Single Pulse 0.0001 0.001 Ton 0.01 0.1 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000