STB772 Semiconductor PNP Silicon Transistor Description • • • • Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with STD882 Switching Application Ordering Information Type NO. Marking STB772 STB772 Package Code MPT Outline Dimensions unit : mm 1.2 Max. 12.5 Min. 0.70 Max. 0.4~0.6 1 2 3 2.5±0.1. 0.5±0.2 2.0±0.1 5.0±0.2 3.4±0.2 21.5±1.0 1.1±0.1 8.5±0.2 6.5±0.2 PIN Connections 1. Emitter 2. Collector 3. Base KST-B015-001 1 STB772 Absolute maximum ratings (Ta=25°°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -15 V Collector-Emitter voltage VCEO -12 V Emitter-Base voltage VEBO -5 V Collector current IC -5 A Collector dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C * : When mounted on 40×40×0.8mm ceramic substate Electrical Characteristics Characteristic (Ta=25°°C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -15 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -12 - - V Emitter-Base breakdown voltage BVEBO IE=-50µA, IC=0 -5 - - V Collector cut-off current ICBO VCB=-12V, IE=0 - - -1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 - - -1 µA hFE1 VCE=-2V, IC=-500mA 160 - 320 - hFE2 VCE=-2V, IC=-3A 40 - - - DC current gain Collector-Emitter on voltage VCE(sat1) IC=-3A, IB=-150mA - - -0.5 V Base-Emitter on voltage VBE(sat) IC=-3A, IB=-150mA - - -1.2 V fT VCB=-5V, IC=-500mA - 150 - MHz VCB=-10V, IE=0, f=1MHz - - 50 pF Transition frequency Collector output capacitance Cob KST-B015-001 2 STB772 Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 3 hFE - IC Fig. 2 Ic - VBE Fig. 4 VCE(sat) - IC KST-B015-001 3