AUK STA124S

STA124S
Semiconductor
PNP Silicon Transistor
Features
• Suitable for low voltage large current drivers
• High DC current gain and large current capability
• Complementary pair with STD123S
Ordering Information
Type NO.
Marking
STA124S
Package Code
124
SOT-23
Outline Dimensions
unit : mm
2.4±0.1
1.30±0.1
2.9±0.1
1.90 Typ.
1
3
0.4 Typ.
2
0.45~0.60
-0.03
0.124 +0.05
0~0.1
0.38
1.12 Max.
0.2 Min.
KST-2100-000
PIN Connections
1. Base
2. Emitter
3. Collector
1
STA124S
Absolute maximum ratings
(Ta=25° C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
-15
V
Collector-Emitter voltage
VCEO
-12
V
Emitter-Base voltage
VEBO
-6.5
V
IC
-1
A
350
mW
Collector current
*
Collector dissipation
PC
Junction temperature
Tj
150
°C
Storage temperature
T stg
-55~150
°C
* : Package mounted on 99.5% alumina 10×8×0.1mm
Electrical Characteristics
Characteristic
(Ta=25° C)
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=-50µA, I E =0
-15
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
-12
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE =-50µA, IC =0
-6.5
-
-
V
Collector cut-off current
ICBO
VCB=-15V, I E =0
-
-
-0.1
µA
Emitter cut-off current
IEBO
VEB =-6V, IC =0
-
-
-0.1
µA
DC current gain
h FE
VCE=-1V, IC =-100mA
200
-
450
-
IC=-500mA, IB =-50mA
-
-0.2
-0.4
V
VCE=-5V, IC =-50mA
-
260
-
MHz
VCB=-10V, I E =0, f=1MHz
-
5
-
pF
Collector-Emitter saturation voltage
Transistor frequency
Collector output capacitance
VCE(sat)
fT
C ob
KST-2100-000
2
STA124S
Fig. 1 PC - Ta
Fig. 3 hFE- IC
Fig. 2 IC - VBE
Fig. 4 VCE(sat)-IC
KST-2100-000
3