DC COMPONENTS CO., LTD. BC184 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Collector 2 = Base 3 = Emitter o 2 Typ .190(4.83) .170(4.33) o 2 Typ Absolute Maximum Ratings(TA=25oC) Characteristic .500 Min (12.70) Symbol Rating Unit Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 6 V Collector Current IC 100 mA Total Power Dissipation PD 350 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 45 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 30 - - V IC=2mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 6 - - V IE=100µA, IC=0 IC=10µA, IE=0 Collector Cutoff Current ICBO - - 15 nA VCB=30V, IE=0 Emitter Cutoff Current IEBO - - 15 nA VEB=4V, IC=0 VCE(sat)1 - 0.07 0.25 V IC=10mA, IB=0.5mA Collector-Emitter Saturation Voltage(1) VCE(sat)2 - 0.2 0.6 V IC=100mA, IB=5mA Base-Emitter Saturation Voltage(1) VBE(sat) - - 1.2 V IC=100mA, IB=5mA VBE(on)1 - 0.5 - V IC=0.1mA, VCE=5V Base-Emitter On Voltage(1) VBE(on)2 0.55 0.62 0.7 V IC=2mA, VCE=5V VBE(on)3 - 0.83 - V IC=100mA, VCE=5V (1) DC Current Gain Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width hFE 240 - 900 - fT 150 - - MHz - - 5 pF Cob 380µs, Duty Cycle Classification of hFE Rank B C Range 240~500 450~900 2% IC=2mA, VCE=5V IC=10mA, VCE=5V, f=100MHz VCB=10V, f=1MHz, IE=0