DC COMPONENTS CO., LTD. DMBT8050 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 .108(0.65) .089(0.25) .063(1.60) .055(1.40) 1 2 Absolute Maximum Ratings(TA=25oC) Symbol Rating Collector-Base Voltage Characteristic VCBO 25 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Total Power Dissipation PD 225 mW .091(2.30) .067(1.70) Unit Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 25 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 20 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA, IC=0 IC=10µA, IE=0 ICBO - - 1 µA VCB=20V, IE=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.6 V IC=500mA, IB=50mA Base-Emitter Saturation Voltage(1) VBE(sat) - - 1.2 V IC=500mA, IB=50mA Collector Cutoff Current (1) DC Current Gain Transition Frequency (1)Pulse Test: Pulse Width hFE 120 - 500 - fT 150 - - MHz 380µs, Duty Cycle 2% Classification of hFE Rank C D E Range 120~200 150~350 250~500 IC=50mA, VCE=1V IC=20mA, VCE=10V, f=100MHz