DC COMPONENTS CO., LTD. R DMBTA64 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for applications requiring high current gain. SOT-23 Pinning .020(0.50) .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3 .108(0.65) .089(0.25) .063(1.60) .055(1.40) 1 2 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCES -30 V Emitter-Base Voltage VEBO -10 V Collector Current IC -500 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO -30 - - V Test Conditions IC=-100µA Collector-Emitter Breakdown Voltage BVCES -30 - - V IC=-100µA Emitter-Base Breakdown Volatge BVEBO -10 - - V IE=-10µA Collector Cutoff Current ICBO - - -100 nA VCB=-30V Emitter Cutoff Current IEBO - - -100 nA VEB=-10V Collector-Emitter Saturation Voltage(1) VCE(sat) - - -1.5 V IC=-100mA, IB=-0.1mA Base-Emitter On Voltage VBE(on) - - -2 V IC=-100mA, VCE=-5V hFE1 10K - - - IC=-10mA, VCE=-5V hFE2 20K - - - fT 125 - - MHz DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% IC=-100mA, VCE=-5V IC=-100mA, VCE=-5V, f=100MHz