DC COMPONENTS CO., LTD. R DMBT5087 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low noise, high gain, general purpose amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 .108(0.65) .089(0.25) .063(1.60) .055(1.40) 1 2 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -3 V Collector Current IC -50 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO -50 - - V Collector-Emitter Breakdown Voltage BVCEO -50 - - V IC=-1mA Emitter-Base Breakdown Volatge BVEBO -3 - - V IE=-10µA ICBO1 - - -10 nA VCB=-10V Collector Cutoff Current Test Conditions IC=-100µA ICBO2 - - -50 nA VCB=-35V Collector-Emitter Saturation Voltage(1) VCE(sat) - - -0.3 V IC=-10mA, IB=-1mA Base-Emitter Saturation Voltage(1) VBE(sat) - - -0.85 V IC=-10mA, IB=-1mA hFE1 250 - 800 - IC=-0.1mA, VCE=-5V hFE2 250 - - - IC=-1mA, VCE=-5V hFE3 250 - - - fT 40 - - MHz - - 4 pF DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Cob 380µs, Duty Cycle 2% IC=-10mA, VCE=-5V IC=-0.5mA, VCE=-5V, f=100MHz VCB=-5V, f=100MHz