FUJI 2SK3597

2SK3597-01
FUJI POWER MOSFET
N-CHANNEL SILICON
POWER
FUJI POWER
MOS FET MOSFET
Super FAP-G Series
OUT VIEW
Outline
Drawings (mm)
外形寸法図
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Fig.1
Ｐ矢視図参照
MARKING
表 示 内 容
Fig.1
Ｐ矢視図
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
DIMENSIONS ARE IN MILLIMETERS.
MARKING
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
V DS
VDSX *5
ID Tc=25°C
Ta=25°C
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-repetitive Avalanche current
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
ID(puls]
VGS
IAS *2
EAS *1
dVDS/dt *4
dV/dt *3
PD Tc=25°C
Ta=25°C
Operating and storage
temperature range
Tch
Tstg
Trademark
表示内容
Ratings
200
170
±30
±4.3 **
±120
±30
30
387
20
5
135
2.4
+150
-55 to +150
2
Unit
V
V
A
A
A
V
A
mJ
kV/µs
kV/µs
W
商標
Special
specification
for customer
特殊品記号
Lot No.
ロットNo.
Type name
Note:1. Dimension shown in ( ) is
reference values.
注）１.（ ）内寸法は参考値とする。
CONNECTION
11 GG: :Gate
Gate
D
結線図
22 S1
S1: :Source1
Source1
33 S2
S2: :Source2
Source2
4G4 DD: :Drain
Drain
S1
形名
S2
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source
°C
°C
S2 : Source
2
** Surface mounted on 1000mm , t=1.6mm FR-4 PCB(Drain pad area : 500mm )
*1 L=689µH, Vcc=48V
*2 Tch<
= BVDSS, Tch <
= 150°C
= -ID, -di/dt=50A/µs, Vcc <
=150°C *3 IF <
*4 VDS <
= 200V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Symbol
V(BR)DSS
VGS(th)
Zero gate voltage drain current
IDSS
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
V SD
t rr
Qrr
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Min.
Test Conditions
ID= 250µA
VGS=0V
ID= 250µA
VDS=VGS
VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V VDS=0V
ID=15A VGS=10V
Typ.
200
3.0
5.0
25
250
100
66
Tch=25°C
Tch=125°C
ID=15A VDS=25V
VDS =75V
VGS=0V
f=1MHz
VCC=48V ID=15A
VGS=10V
RGS=10 Ω
V CC=100V
ID=30A
VGS=10V
L=100µH Tch=25°C
IF=30A VGS=0V Tch=25°C
IF=30A VGS=0V
-di/dt=100A/µs Tch=25°C
Max.
10
50
12.5
25
1960
2940
260
390
18
27
20
30
17
26
53
80
19
29
51
76.5
15
22.5
16
24
30
1.10
1.65
0.19
1.4
Units
V
V
µA
nA
mΩ
S
pF
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Symbol
Test Conditions
Rth(ch-c)
channel to case
Thermal resistance
Rth(ch-a)
channel to ambient
Rth(ch-a) **
channel to ambient
** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
www.fujielectric.co.jp/denshi/scd
Min.
Typ.
Max.
0.926
87.0
52.0
Units
°C/W
°C/W
1
2SK3597-01
FUJI POWER MOSFET
Characteristics
200
Allowable Power Dissipation
PD=f(Tc)
Allowable Power Dissipation
PD=f(Tc)
5
Surface mounted on
2
175
1000mm ,t=1.6mm FR-4 PCB
2
(Drain pad area : 500mm )
4
150
3
PD [W]
PD [W]
125
100
75
2
50
1
25
0
0
25
50
75
100
125
0
150
0
25
50
Tc [°C]
75
100
125
150
Tc [°C]
Typical Output Characteristics
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=30A
ID=f(VDS):80µs Pulse test,Tch=25°C
120
500
20V
100
10V
400
8V
80
ID [A]
EAV [mJ]
300
7.5V
7.0V
60
200
6.5V
40
6.0V
100
20
VGS=5.5V
0
0
0
25
50
75
100
125
0
150
2
4
6
8
10
12
VDS [V]
starting Tch [ °C]
Typical Transfer Characteristic
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
100
gfs [S]
ID[A]
10
10
1
1
0.1
0
1
2
3
4
5
VGS[V]
6
7
8
9
10
0.1
0.1
1
10
100
ID [A]
2
2SK3597-01
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=15A,VGS=10V
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
200
0.20
180
RDS(on) [ Ω ]
6.5V
160
7.0V
7.5V
8V
0.10
140
RDS(on) [ m Ω ]
VGS=
6.0V
5.5V
0.15
10V
20V
120
100
max.
80
60
typ.
0.05
40
20
0.00
0
0
20
40
60
80
100
120
-50
-25
0
25
50
75
100
125
150
Tch [°C]
ID [A]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µ A
Typical Gate Charge Characteristics
VGS=f(Qg):ID=30A, Tch=25°C
7.0
14
6.5
6.0
12
5.5
max.
10
4.5
4.0
VGS [V]
VGS(th) [V]
5.0
3.5
3.0
min.
Vcc= 100V
8
6
2.5
2.0
4
1.5
1.0
2
0.5
0
0.0
-50
-25
0
25
50
75
100
125
0
150
10
20
30
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10
40
50
60
70
80
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
1
100
Ciss
0
IF [A]
10
C [nF]
10
Coss
10
-1
1
Crss
10
-2
10
-1
10
0
10
VDS [V]
1
10
2
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VSD [V]
3
2SK3597-01
FUJI POWER MOSFET
Typical Switching Characteristics vs. ID
10
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
3
100
Thermal Resistance vs. Drain Pad area
t=1.6mm FR-4 PCB
90
2
td(off)
t [ns]
10
Rth(ch-a) [°C/W]
tf
td(on)
80
70
60
50
40
10
1
30
tr
20
10
10
0
0
10
-1
10
0
10
1
10
0
2
1000
Zth(ch-c) [°C/W]
10
1
10
0
2000
3000
4000
5000
2
Drain Pad Area [mm ]
ID [A]
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
-1
10
-2
10
-3
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C. Vcc=48V
2
Avalanche current IAV [A]
10
Single Pulse
1
10
0
10
-1
10
-2
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
tAV [sec]
4