< SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) FEATURE ・ Super mini package for easy mounting OUTLINE DRAWING 2SA1602A ・Excellent linearity of DC forward gain 2SA1235A 2.5 2.1 0.4 0.5 ③ 0.16 0.95 ② 1.5 0～0.1 0～0.1 0.8 1.1 0.15 ③ ① 0.95 0.65 ② 2.9 1.90 0.65 ① 0.5 0.425 0.7 0.9 2.0 1.3 APPLICATION 1.25 0.3 0.425 ・Small collector to emitter saturation voltage VCE(sat)=-0.3V max For Hybrid IC,small type machine low frequency voltageAmplify application Unit：ｍｍ JEITA：SC-70 JEDEC：－ JEITA：SC-59 JEDEC：TO-236 類似 TERMINAL CONNECTER ①：BASE ②：EMITTER ③：COLLECTOR TERMINAL CONNECTER ①：BASE ②：EMITTER ③：COLLECTOR 2SA1993 3.0 4.0 1.0 14.0 1.0 0.1 0.45 2.5 0.4 1.27 1.27 ① ② ③ JEITA：－ JEDEC：－ TERMINAL CONNECTER ①：EMITTER ②：COLLECTOR ③：BASE ISAHAYA ELECTRONICS CORPORATION < SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) MAXIMUM RATINGS（Ｔａ＝２５℃） Symbol ＶＣＢＯ ＶＥＢＯ Ratings Parameter 2SA1235A Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation Junction temperature Storage temperature ＶＣＥＯ Ｉ Ｃ ＰＣ Ｔｊ Ｔｓｔｇ 2SA1602A 2SA1993 -60 -50 -60 Unit V -6 V -50 V 200 200 mA 200 450 mW +150 ℃ -55～+150 ℃ ELECTRICAL CHARACTERISTICS（Ta=25℃） Parame ter Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ Ｉ Symbol Test conditions C to E break down voltage I C=-100μA，RBE=∞ Collector cut off current Emitter cut off current 2SA1993 EＢＯ DC forward current gain ｈＦＥ* DC forward current gain ｈＦＥ 2SA1235A,2SA1602A VEB=-6V，I VCE=-6V，I ＶＣＥ（ｓａｔ） ｆＴ Cob NF E E =0 =0 =0 C =-1mA 2SA1235A,2SA1602A Collector output capacitance C to E break down voltage Noise figure VCE=-6V，I C =-0.1mA *： It shows hFE classification in below table. ｈFE 2SA1235A 2SA1602A 2SA1993 E F 150～300 250～500 -0.1 -0.1 -0.1 500 150 I C =-100mA，I B =-10mA VCE=-6V，I E =10mA VCB=-6V，I E =0,f=1MHz VCE=-6V，I E =0.3mA,f=100Hz,RG=10ｋΩ Gain bandwidth product Max -50 VCB=-50V，I VCB=-60V，I C 2SA1993 C to E Saturation Vlotage Min Limits Typ ISAHAYA ELECTRONICS CORPORATION 50 90 -0.3 200 4.0 20 Unit V μA μA － － － V MHz pF dB < SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) 2SA1235A、2SA1602 2SA1993 COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE 500 COLLECTOR DISSIPATION Pc (mW) COLLECTOR DISSIPATION Pc (mW) 250 200 150 100 50 0 0 25 50 75 100 AMBIENT TEMPERTURE Ta (℃) 125 150 400 300 200 100 0 0 25 50 75 100 AMBIENT TEMPERTURE Ta (℃) ISAHAYA ELECTRONICS CORPORATION 125 150 < SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) COMMON EMITTER OUTPUT -50 COMMON EMITTER TRANSFER -50 0.18mA Ta=25℃ 0.14mA -40 0.12mA 0.10mA -30 0.08mA 0.06mA -20 0.04mA -10 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) 0.16mA 0.02mA Ta=25℃ VCE=-6V -40 -30 -20 -10 IB=0 -0 -0 -0 -1 -2 -3 -4 -5 -0.0 -0.2 -0.6 10000 -1.0 250 Ta=25℃ VCE=-6V 100(@IC=-1mA) GAIN BAND WIDTH PRODUCT fT(MHz) Ta=25℃ VCE=-6V 1000 100 10 200 150 100 50 0 1 -0.1 -1 -10 -100 COLLECTOR CURRENT IC(mA) -1000 0.1 1 10 EMITTER CURRENT IE(mA) COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) -0.8 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE -0.4 BASE TO EMITTER VOLTAGE VBE(V) COLLECTOR EMITTER VOLTAGE VCE(V) Ta=25℃ IE=0 f=1MHz 10 1 0.1 -0.1 -1 -10 COLLECTOR TO BASE VOLTAGE VCB(V) -100 ISAHAYA ELECTRONICS CORPORATION 100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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